2000
DOI: 10.4218/etrij.00.0100.0105
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Extraction of Passive Device Model Parameters Using Genetic Algorithms

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Cited by 11 publications
(5 citation statements)
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“…A novel method of full 3-D embedded gridded parallel plate capacitor modeling and simulation has been utilized. This method is based on the generation of passive circuit element models [8]. This approach first determines a set of fundamental circuit building blocks for the capacitors, and then test structures are designed, fabricated, and their s-parameters are measured up to a desired frequency.…”
Section: Modeling Scheme 1 Capacitor Modeling Proceduresmentioning
confidence: 99%
See 2 more Smart Citations
“…A novel method of full 3-D embedded gridded parallel plate capacitor modeling and simulation has been utilized. This method is based on the generation of passive circuit element models [8]. This approach first determines a set of fundamental circuit building blocks for the capacitors, and then test structures are designed, fabricated, and their s-parameters are measured up to a desired frequency.…”
Section: Modeling Scheme 1 Capacitor Modeling Proceduresmentioning
confidence: 99%
“…Fathy et al presented modeling and design guidelines for embedded passives in LTCC on metal technology [7]. Yun et al presented accurate device model parameter optimization for embedded passives using genetic algorithms [8].…”
Section: Introductionmentioning
confidence: 99%
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“…Fathy et al presented modeling and design guidelines for embedded passives in LTCC on metal technology [7]. Yun et al presented accurate device model parameter optimization for embedded passives using genetic algorithms and statistical modeling of 3-D gridded-plate embedded capacitors [8], [9].…”
Section: Introductionmentioning
confidence: 99%
“…A set of integrated inductor structures was fabricated, and their scattering parameters were measured for a range of frequencies from 50 MHz to 5 GHz. Using optimized equivalent circuits obtained from HSPICE and the building block based modeling method [8], the mean and standard deviation was calculated for each component of each device model. Monte Carlo Analysis for the inductor structures was then performed using HSPICE.…”
Section: Introductionmentioning
confidence: 99%