Extraction of Self-Heating Free I-V Curves Including the Substrate Current of PD SOI MOSFETs

Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs

“…Another benchmark test important for SOI models concerns self-heating effect [37]. It has been also performed with positive results identical to those presented in [8] for PSP-SOI PD.…”

Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges

“…Hence, it is desirable to generate "self-heating free" data before parameter calibration. It should be mentioned that self-heating removal is not only implemented for the channel current but also for other parasitic currents such as the impact ionization current [7]. Figure 4 compares self-heated measurements to self-heatingfree post-processed I-V curves assuming that a linear temperature interpretation is appropriate.…”

PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs

“…The data are usually taken from static measurements where self-heating effect is significant. Recently a new methodology to derive self-heating free data (for both drain and substrate currents) has been proposed to reduce the iteration loops in 45 4-1-5 parameter extraction process [32] . …”