Extraction of the slow oxide trap density in MOS transistors using the charge pumping method

Maneglia, Y.; Bauza, D.; Ouisse, T.

doi:10.1109/smicnd.1995.494886

Cited by 3 publications

(5 citation statements)

References 5 publications

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“…Lundstrom et al found 0 τ to be 6.6x10 -14 s [78]. It appears that the DP camp (refer to section 2.5) based their depth calculation on this model [25,27,93,94]. A depth versus time which is half of a CP cycle for this model is simulated and shown in The tunneling front model developed in early work [77] neglects the effect of oxide electric field and a square barrier shape is assumed.…”

Section: Theoretical Modelmentioning

confidence: 95%

“…In the shallow camp, they assume this time is 10 ns. It originates from the theoretical calculation by Maneglia et.al [27,[79][80][81][82][83][84][85][86]. However, it has never been experimentally proved.…”

Section: Controversy In Frequency Dependent Charge Pumpingmentioning

confidence: 99%

“…It is much shorter than the one used by SP camp (10ns). The origin of the 10ns trap-filling time is from a classical scattering treatment [27], which can be traced back to Shockley-Read and Hall [67,68]. In the SRH theory, it says that a defect in the forbidden gap can capture electrons from conduction band and holes from valence band.…”

Section: Examining Existing Theoretical Modelmentioning

confidence: 99%

“…To that end, very few measurement techniques are at the disposal of scientists and engineers. Frequency dependent charge-pumping (FDCP) has emerged as the best candidate for the task [26][27]. However, even though the technique has been around…”

Section: Introductionmentioning

confidence: 99%

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Powder characterization

1997

Metal Powder Report

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Rapid advances in the semiconductor industry have led to the proliferation of electric devices and information technology (IT). Integrated circuits(IC) based upon silicon MOSFET's have been used in virtually every electronic device produced today. The competitiveness of this huge market urges an increased device performance with lower cost. Over the past three decades, it is fulfilled by reducing transistor gate lengths and oxide thickness with each new generation of manufacturing technology.The leading edge CMOS technology is currently at the 45nm node with physical gate length at 18 nm and an equivalent gate oxide thickness (EOT) of 0.9 nm. However, as iii the device is miniaturized into the nanometer-scale regime nowadays, some challenges abound. Some challenges are new, some are just getting tougher and most of them will continue to become even more difficult to deal with for future generations. It is the world-wide effort to meet these challenges for sustaining the rapid growth of the industry. In this thesis, we will address a few of these challenges and offer some new approaches to get around them. Specifically, we introduce a new measurement technique to solve the precision problem in C-V measurement based on Time domain Reflectrometry(TDR). We also use the combination of experiment and theory to resolve the defect depth-profiling ambiguity associated with charge pumping measurement. Moreover, we find a new mode in transistor degradation that will become much more serious as the transistor size shrinks further. All these results represent a major and important advance which is also timely to the IC industry. iv Acknowledgements I am grateful for this opportunity to acknowledge the people who have made this thesis proposal possible. First and foremost, I would like to thank my advisor Professor Kin.P. Cheung, who has introduced me to the world of research. It is an intellectually stimulating as well as exciting field. His endless enthusiasm and scientific knowledge continues to be a great inspiration to me. And I deeply appreciate the guidance and support he has given me over the years. In addition, I am very grateful for the collaborative opportunities I have with National Institutes of Standard and Technology (NIST). In particular, I must thank Dr. John Suehle, who is also one of my thesis committee members, for his kindness and help to provide me the facilities to do the NBTI experiment. Also the discussion with him has greatly increased the scope and importance of my thesis. I would also like to thank other committee members, those are, Dr.Lu, Dr.Sheng, for their continued guidance and encouragement. At the end, I am grateful to all my friends from Rutgers University, for being the surrogate family during the many years I stayed here and for their continued moral support. Finally, I am forever indebted to my father Dr. Wenbiao Wang , my mother Yunhong Lv and my wife Qiankun Sun for their understanding, endless patience and encouragement when it was most required.

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Section: Theoretical Modelmentioning

confidence: 95%

Section: Controversy In Frequency Dependent Charge Pumpingmentioning

confidence: 99%

Section: Examining Existing Theoretical Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Powder characterization

1997

Metal Powder Report

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“…The fact that in the presence of tunneling, traps in the "bulk" of the oxide layer can exchange charge with the substrate has been utilized in frequency-dependent chargepumping (FDCP) experiment to probe these "bulk" traps (15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31)(32). These works rely on the knowledge that defects deeper in the oxide bulk respond slower.…”

Section: Onementioning

confidence: 99%

The Challenge of Measuring Defects in Nanoscale Dielectrics

Cheung¹,

Suehle²

2008

ECS Trans.

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Defects in nanoscale gate dielectric of MOS devices can exchange charges with the substrate via quantum mechanical tunneling. This characteristic has been utilized in many measurement methods to measure the defects and its spatial distribution. In some cases, the quantitative relationship between tunneling time and defect depth can be established. In other cases, this is not yet possible due to the lack of knowledge about the interface trap-fill time. As gate dielectrics reaches less than 1 nm equivalent oxide thickness, the measurement techniques must be made at higher speeds. Measurement into the GHz range will be needed.

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High frequency techniques for advanced MOS device characterization

Wang¹

2008

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Extraction of the slow oxide trap density in MOS transistors using the charge pumping method

Cited by 3 publications

References 5 publications

Powder characterization

Powder characterization

The Challenge of Measuring Defects in Nanoscale Dielectrics

High frequency techniques for advanced MOS device characterization

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