2021 International Conference on Communication, Control and Information Sciences (ICCISc) 2021
DOI: 10.1109/iccisc52257.2021.9484987
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Extraction of Undetectable Faults in 6T- SRAM Cell

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Cited by 3 publications
(2 citation statements)
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“…The delayed release is caused by the VAST bit lines capacity and the limited access to the bit cell transistors. A slight discrepancy is broadened by the SA between the bit line voltages and the digital levels [76].…”
Section: Sense Amplifiermentioning
confidence: 99%
“…The delayed release is caused by the VAST bit lines capacity and the limited access to the bit cell transistors. A slight discrepancy is broadened by the SA between the bit line voltages and the digital levels [76].…”
Section: Sense Amplifiermentioning
confidence: 99%
“…The system experiences different impacts depending on how short or open defects between the nodes. The effect of such short/open faults on the behavior of deep submicron 6T-SRAM cells is explored in this work [4][5][6].…”
Section: Introductionmentioning
confidence: 99%