2014
DOI: 10.1038/srep05530
|View full text |Cite
|
Sign up to set email alerts
|

Extraordinary Second Harmonic Generation in Tungsten Disulfide Monolayers

Abstract: We investigate Second Harmonic Generation (SHG) in monolayer WS2 both deposited on a SiO2/Si substrate or suspended using transmission electron microscopy grids. We find unusually large second order nonlinear susceptibility, with an estimated value of deff ~ 4.5 nm/V nearly three orders of magnitude larger than other common nonlinear crystals. In order to quantitatively characterize the nonlinear susceptibility of two-dimensional (2D) materials, we have developed a formalism to model SHG based on the Green's f… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

27
303
0
1

Year Published

2015
2015
2023
2023

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 307 publications
(331 citation statements)
references
References 40 publications
27
303
0
1
Order By: Relevance
“…v ð2Þ ¼ 4.5 nm/V has been reported for synthesized monolayer WS 2 at an excitation wavelength of 832 nm. 25 Therefore, we conclude that the second-order nonlinearity coefficient of GaTe is around two and three orders of magnitude lower than the v ð2Þ of MoS 2 and WS 2 measured at the wavelength of $800 nm, respectively. However, our measurements have been done at the wavelength of 1560 nm, and therefore, the second-harmonic wavelength is 780 nm (lower photon energy than the band-gap).…”
mentioning
confidence: 59%
See 1 more Smart Citation
“…v ð2Þ ¼ 4.5 nm/V has been reported for synthesized monolayer WS 2 at an excitation wavelength of 832 nm. 25 Therefore, we conclude that the second-order nonlinearity coefficient of GaTe is around two and three orders of magnitude lower than the v ð2Þ of MoS 2 and WS 2 measured at the wavelength of $800 nm, respectively. However, our measurements have been done at the wavelength of 1560 nm, and therefore, the second-harmonic wavelength is 780 nm (lower photon energy than the band-gap).…”
mentioning
confidence: 59%
“…where R is the repetition rate, t i the pulse width, P avi the average power (i ¼ 1: fundamental, 2: SH), and / ¼ 3.56 from 25 We used refractive indices for SiO 2 of n 2 ¼ 1:45 and n 1 ¼ 1:44 determined at the wavelength of 780nm and 1560nm, respectively. 26 Here, the repetition rate was R¼75MHz, pulse widths t 1 ¼t 2 ¼228fs, fundamental average laser power P av1 ¼ 5 Â 10 À3 W, average 2016) laser power of the SHG signal on the 14nm thick GaTe flake P av2 ¼ 8:93 Â 10 À13 W, numerical aperture NA¼0.5, permittivity of free space e 0 ¼ 8:854Â10 À12 Fm À1 , velocity of light c ¼ 2:99Â10 8 ms À1 , and the wavelength of the SHG signal k 2 ¼ 780nm were used to calculate the sheet nonlinear susceptibility of 14-nm-thick GaTe.…”
mentioning
confidence: 99%
“…Accordingly, a great deal of attention has been devoted to the linear optical properties of these compounds [1][2][3] . Also, non-linear optical techniques have been demonstrated as particularly powerful probes for the microscopic structure of few-layered TMD crystals, revealing e.g., their crystallographic orientation 7,[14][15][16][17] , and stacking angle 18 . Moreover, second-harmonic (SH) spectroscopy allows for insights into the electronic structure of TMD flakes 14 , exposing edge-localized effects 19 , or valley-coherent excitations 7 .…”
mentioning
confidence: 99%
“…Applications include four-wave mixing [3,4], efficient lasing [5], and harmonic generation, more specifically third harmonic generation (THG) [6,7] and second harmonic generation (SHG) in noncentrosymmetric crystals, such as transitionmetal dichalcogenides (TMDs) [8][9][10][11][12][13] and hexagonal boron nitride (hBN) [8]. Recent advances in atomically thin materials, such as graphene, TMDs, and others have sparked interest in two-dimensional (2D) optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%