Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules

Reliability-oriented IGBT selection for high power converters

“…At the beginning, the power module are regarded as perfect, so P0(t)=1. The solution of the state equation (9) is (10). The time-variant failure rate of the entire power module can be calculated as (11).…”

“…Firstly, catastrophic burnout of IGBT devices can be initiated through local selfsustaining filamentary discharges produced in the silicon by recoil nuclei, which result either from neutron scattering, or from the decay of neutron-activated isotopes within the semiconductor [9]. At normal operating conditions, highenergy neutrons are usually associated with terrestrial cosmic radiations [10], which indicates that the higher altitude of the application location, the higher the possibility of this kind of failure. A universal curve has been derived from the Zeller model [11], which predicts the failure rate of bipolar devices (thyristors, GTO, diodes) as function of an electric field parameter.…”

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

“…An analytic expression for the flux increase with altitude is given in [3]. The basic requirement to the infrastructure led to storage tests on the Zugspitze (2964 m) [46] and on the Jungfraujoch (3580 m) [61], which yield acceleration factors over sea level of 11 and 16, respectively. Accordingly, the failure rate level of 1000 FIT/device (sea level) is accessible.…”

Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices

“…Failure rates were massively decreased during operation below shields made of several-meter-thick concrete [3]. However, failure rates increased orders of magnitudes upon operation of the devices in high altitude laboratories [2,6]. These results led the focus on an interaction of energetic particles emanating from cosmic radiation with silicon atoms in the high field depletion layer.…”

“…Only a few years later it also became apparent that power semiconductor devices can be destroyed by the interaction with cosmic radiation [1][2][3]5]. Cosmic ray induced failure mechanisms have since then imposed severe limitations on the maximum DC blocking voltage for high voltage power devices (power MOSFET, BJT, IGBT, GTO, and power diode) [6][7][8]. It is common practise to de-rate their maximum rated blocking voltages by as much as 50%; thus, the devices must be operated far below their rated and guaranteed performance just to meet the lifetime requirements.…”