"Extreme edge engineering" - 2 mm edge exclusion challenges and cost-effective solutions for yield enhancement in high volume manufacturing for 200 and 300 mm wafer fabs

Tran, Tony; Roberts, W.; Tiffany, Jason E.; Jekauc, Igor; Clements, Nicholas; Jowett, P.; Ferguson, Richard A.; Mattson, David; Demmert, Cort; Richmond, M.; Wiendl, C.; Bruno, Michael H.; Brock, A.; Taylor, T. S.

doi:10.1109/asmc.2004.1309614

Cited by 3 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to the influence of tip/edge effect, the electrostatic field will be distorted at the edge, and the etch depth near the edge is different from that far from the edge because the microstructures have different tilt angles [18]. To our best knowledge, even for the HVM (high volume manufacturing) plasma tools, the published literature still shows an edge exclusion (EE) of 2 mm [19]. Thus, in addition to the uniformity in the vertical direction (etch depth and etch rate), the tilt effect in the wafer edge will reduce the etch depth, which can be considered as an issue of the uniformity in the lateral direction.…”

Section: Introductionmentioning

confidence: 99%

Towards tilt-free in plasma etching

Tang¹,

Zhang²,

Lin³

et al. 2021

J. Micromech. Microeng.

View full text Add to dashboard Cite

Plasma etching is a key process for microstructures manufacturing in device, and it is widely applied in both scientific and industrial communities. Tilt effect is a vital-obstacle in the progress of plasma etching yield improvement/cost down, and the efforts made to improve the tilt effect solely focus on the optimization of electrostatic field, which cannot eliminate the tilt effect within 3 mm from the edge. In this paper, we found that the gas flow field is another reason of the tilt effect in plasma etching with sufficient proof. To be more specific, the gas flow field has influence on the etching results at the entire wafer, whereas the electrostatic field distortion could usually affect that at the wafer edge. Correspondingly, tilt-free plasma etching could be realized by optimizing the gas flow field. Revealing the gas flow field dominated tilt effect is helpful to demonstrate the plasma etching mechanism, and the realization of tilt-free in plasma etching has significant effect on device fabrication/manufacturing.

show abstract

Section: Introductionmentioning

confidence: 99%