Extreme temperature operation for broad bandwidth quantum-dot based superluminescent diodes

Abstract

The high-temperature resilience of quantum-dot (QD) laser materials is exploited to realize a broad spectral bandwidth emitter in the near infrared. For an InAs/GaAs-based QD-superluminescent light emitting diode (SLEDs), we introduced a 2000 μm long, 5 μm width ridge waveguide that is tilted by 7° and composed of eight multi-sections. With increased temperature operation over 160 °C, the spectral bandwidth is dramatically increased by thermally excited carrier transition in ES1 and ES2. Additionally, the positive net-modal gain is demonstrated at the high operating temperatures, and this is exploited in the QD-SLEDs operating at 180 °C, which exhibit a −3 dB linewidth of 270 nm and a power of 0.34 mW. The simplicity of this approach, utilizing heat alone, is contrasted with other approaches for the extremely broad spectral bandwidth emitter.

Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers

“…This effect can be attributed to the temperature escape of charge carriers from the QWD layers with lower confinement energy of electrons and holes and following recapture by the ones with high confinement energy, which results in a stronger contribution of 9ML-QWDs (1070 nm). In [23], SLD operation at strongly increased temperatures was proposed to realize large spectral bandwidth. The temperature-dependent performance of InAs/GaAs QD-based SLDs with 2000 µm long, 5 µm wide ridge waveguides tilted by 7 • and composed of eight multi-sections were investigated.…”