Extreme ultraviolet mask defect simulation

Pistor, Tom; Neureuther, Andrew R.

doi:10.1116/1.590946

Cited by 15 publications

(13 citation statements)

References 6 publications

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“…Approximate quantitative evaluation about the 3D behavior can nevertheless be drawn. Indeed, as pointed out by Pistor 1) it can be considered that a point defect will cause an intensity drop that is as a rule of thumb twice smaller than that caused by a line defect of the same size. This is particularly true for mid-size objects.…”

Section: Resultsmentioning

confidence: 99%

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Rigorous Simulation of Line-Defects in Extreme UV Masks

Schiavone¹,

Payerne²

2005

Jpn. J. Appl. Phys.

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Abstract:In this paper, rigorous electromagnetic simulation is used to investigate the behavior of line defects in EUV masks. Using the Modal Method by Fourier Expansion, the geometry of the structure as well as the polarization state can be handled. A simple analytical model has been developed in order to generate the input geometry for the simulations. The deposition conditions can be mimicked by changing an empirical parameter representing the planarisation properties of the process. The influence of the defect size and of its position in the multilayer mirror is analyzed. The position of the defect with respect to an absorber feature is very important and is also considered.It is shown that the size of the nucleation particle by itself is not a relevant parameter to describe a defect. The process conditions modify largely the propagation of the defect into the multilayer mirror and induce very large variation of its printability. Some defects that do not affect the surface of the mirror can induce a non negligible intensity drop

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Section: Resultsmentioning

confidence: 99%

“…The problem of defects in EUV mask has already been addressed by several authors [1][2][3][4] . In simplified approaches, the defect is only seen as a perturbation of the surface of the multilayer mirror 2,3) .…”

Section: Introductionmentioning

confidence: 99%

Rigorous Simulation of Line-Defects in Extreme UV Masks

Schiavone¹,

Payerne²

2005

Jpn. J. Appl. Phys.

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“…Results based on the time-domain finite-element method 6 and the differential method 7 are also published. Up to now the finite-difference time-domain (FDTD) method 8 is more widely used, because of the availability of FDTD-based software [9][10][11][12][13][14] . So far, no three dimensional simulations with RCWA or similar methods have been published.…”

Section: Simulation Modelmentioning

confidence: 99%

Simulation of extreme ultraviolet masks with defective multilayers

Evanschitzky¹,

Erdmann²,

Besacier³

et al. 2003

SPIE Proceedings

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Because the capabilities for experimental studies are still limited, a predictive simulation of EUV lithography is very important for a better understanding of the technology. One of the most critical issues in EUV lithography modeling is the description of the mask, especially including multilayer defects. A new model for the characterization of defects in the multilayer of an EUV reflective mask is presented. The mask is divided into an absorber part, which defines the features on the mask, and a multilayer part, which determines the reflectivity of the mask without absorber. Since the height of the mask features is large in comparison to the illumination wavelength, the computation of the absorber part is performed by a finite-difference time-domain (FDTD) method. Because of the limited range of illumination angles with a high reflectivity and the limited diffraction efficiency of the multilayer, the computation of the reflectivity of the defective multilayer is performed by the Fresnel-method. The defect topography is taken into account by means of correcting the phase and the angle of incidence. For the complete computation of the reflected light from the EUV mask a coupling of the two methods is realized. Thus, the model can be applied to two and three dimensional defects and masks. The impact of the defects on the mask reflectivity, the near field and the aerial image is analyzed. Typical mask structures, such as 2D-lines and 3D-dots with various defects, are investigated. First comparisons with another simulation model, the MMFE method, are presented.

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“…The computationa1 process is based on the standard Yeealgorithm which employs both periodic and absorbing boundary conditions The phase defect became locally distorted with Gaussianshaped profile [3]. All layers composed of ML are assumed to have identical distortions from the substrate to the top surface layer.…”

Section: Calculation Proceduresmentioning

confidence: 99%