Extreme UV chemically amplified resists not limited by secondary electron blur

Gronheid, Roel; Younkin, Todd R.; Leeson, Michael J.; Fonseca, Carlos; Hooge, Joshua; Nafus, Kathleen; Biafore, John J.; Smith, Mark D.

doi:10.1117/2.1201104.003591

Cited by 2 publications

(3 citation statements)

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“…The self-assembly of block copolymers have been successfully applied to line and space (L/S) and contact holes with low defect densities. With respect to vertical interconnect access lithography (VIAL), many researches have demonstrated that DSA of cylinder-forming block copolymers such as poly(styrene-b-methyl methacrylate) (PS-PMMA) can be used to produce high-resolution contact holes with reduced critical dimensions (CDs) relative to a prepattern made by the conventional top-down lithography [11][12][13] . In addition to the hole shrink problem with PS-PMMA block copolymers, recent studies have focused on contact-hole multiplications for the purpose to decrease the lithography mask cost.…”

Section: Introductionmentioning

confidence: 99%

Field-theoretic Simulations of Directed Self-assembly for Contact Multiplication

Iwama

Laachi

Delaney

et al. 2015

J. Photopol. Sci. Technol.

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We use three-dimensional self-consistent field theory (SCFT) to study the self-assembly of cylinder forming diblock copolymers confined in elongated templates. This situation arises in contact holes where the goal is to produce a contact hole with reduced dimensions as well as with narrowed pitch of the center-to-center distance of cylinders. In this study, we focus on systems where two minor-block cylinders form in inside of the elongated templates. A defective bridge structure is extensively studied in this work and we evaluate the defect in various wall affinities such as "all PMMA-attractive templates", "all neutral templates" and "PMMA-attractive sidewall with the neutral substrate". According to our SCFT simulations, the defect formation energy of the bridge is typically above 20 kT, or fewer than 2 defects per billion in the "all neutral" template and "PMMA-attractive sidewall with the neutral substrate", while the defect preferably forms in the "all PMMA attractive" template.

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Section: Introductionmentioning

confidence: 99%

Field-theoretic Simulations of Directed Self-assembly for Contact Multiplication

Iwama

Laachi

Delaney

et al. 2015

J. Photopol. Sci. Technol.

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“…This understanding will help improve proximity effect correction algorithms − and push the resolution of EBL toward the sub-5 nm scale. The limiting factors in EBL may also limit other lithographic techniques, such as ion-beam and extreme-ultraviolet lithography . In addition, the measurement of the EBL PSF at the Ångström scale gives a unique measure of the interaction volume of an electron beam with a sample, which is important for studying the resolution limits of scanning electron microscopy. , …”

mentioning

confidence: 99%

“…VPs can be excited by electrons and high-energy photons, such as extreme ultraviolet (EUV) . EUV lithography is of increasing interest because it is considered the next generation lithographic technology for high volume manufacturing of semiconductors. , Therefore, we note that the VP and SE PSFs may be important factors in the resolution limit analysis of EUV lithography. Furthermore, the experimental knowledge of the lithographic PSF at the sub-10 nm scale gives a unique way to measure electron–sample interaction volume, which is important to test theoretical models for scanning electron microscopy. ,,,, …”

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confidence: 99%

Determining the Resolution Limits of Electron-Beam Lithography: Direct Measurement of the Point-Spread Function

et al. 2014

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One challenge existing since the invention of electron-beam lithography (EBL) is understanding the exposure mechanisms that limit the resolution of EBL. To overcome this challenge, we need to understand the spatial distribution of energy density deposited in the resist, that is, the point-spread function (PSF). During EBL exposure, the processes of electron scattering, phonon, photon, plasmon, and electron emission in the resist are combined, which complicates the analysis of the EBL PSF. Here, we show the measurement of delocalized energy transfer in EBL exposure by using chromatic aberration-corrected energy-filtered transmission electron microscopy (EFTEM) at the sub-10 nm scale. We have defined the role of spot size, electron scattering, secondary electrons, and volume plasmons in the lithographic PSF by performing EFTEM, momentum-resolved electron energy loss spectroscopy (EELS), sub-10 nm EBL, and Monte Carlo simulations. We expect that these results will enable alternative ways to improve the resolution limit of EBL. Furthermore, our approach to study the resolution limits of EBL may be applied to other lithographic techniques where electrons also play a key role in resist exposure, such as ion-beam-, X-ray-, and extreme-ultraviolet lithography.

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Extreme UV chemically amplified resists not limited by secondary electron blur

Cited by 2 publications

References 0 publications

Field-theoretic Simulations of Directed Self-assembly for Contact Multiplication

Field-theoretic Simulations of Directed Self-assembly for Contact Multiplication

Determining the Resolution Limits of Electron-Beam Lithography: Direct Measurement of the Point-Spread Function

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