Extreme value statistics in silicon photonics

Borlaug, David; Jalali, Bahram

doi:10.1109/leos.2008.4688614

Cited by 10 publications

(14 citation statements)

References 17 publications

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“…In all the following numerical and analytical solutions, a pump wavelength of 2.88 µm is used. 3,4 The corresponding Stokes wavelength is 3.39 µm according to silicon's optical phonon energy. The Raman gain coefficient g R is estimated to be as high as 9 cm/GW at these wavelengths.…”

Section: Resultsmentioning

confidence: 99%

“…Such pump intensities can be attained in practice by solid-state mid-IR lasers (e.g., optical parametric oscillators). 3,4 Also shown in the inset of Fig. 1 is the input-output (light-light) characteristic of the laser.…”

Section: Resultsmentioning

confidence: 99%

“…1 More recently, silicon photonics has been pursued in the 3-5 µm or mid-wave infrared (MWIR or mid-IR) regime with applications in chemical and biological sensing, tissue photoablation, environmental monitoring and free-space communications. [2][3][4][5][6][7][8][9] The key advantage of the mid-IR wavelength range, as compared with near-IR, is the absence of two-photon absorption (TPA) and free-carrier absorption (FCA) at wavelength above ~2.2 µm. 2 Optical Raman amplification at 3.4 µm, 3,4 four-wave mixing and parametric amplification at ~2.2 µm, 7,8 silicon-onsapphire waveguides at 4.5 µm and silicon-on-insulator waveguides at 3.39 µm are some of the recent developments in the emerging field of mid-IR silicon photonics.…”

Section: Introductionmentioning

confidence: 99%

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Analytical modeling of mid-infrared silicon Raman lasers

Fathpour

2012

SPIE Proceedings

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Silicon photonics has significantly matured in the near-infrared (telecommunication) wavelength range with several commercial products already in the market. More recently, the technology has been extended into the mid-infrared (mid-IR) regime with potential applications in biochemical sensing, tissue photoablation, environmental monitoring and freespace communications. The key advantage of silicon in the mid-IR, as compared with near-IR, is the absence of twophoton absorption (TPA) and free-carrier absorption (FCA). The absence of these nonlinear losses would potentially lead to high-performance nonlinear devices based on Raman and Kerr effects. Also, with the absence of TPA and FCA, the coupled-wave equations that are usually numerically solved to model these nonlinear devices lend themselves to analytical solutions in the mid-IR. In this paper, an analytical model for mid-IR silicon Raman lasers is developed. The validity of the model is confirmed by comparing it with numerical solutions of the coupled-wave equations. The developed model can be used as a versatile and efficient tool for analysis, design and optimization of mid-IR silicon Raman lasers, or to find good initial guesses for numerical methods. The effects of cavity parameters, such as cavity length and facet reflectivities, on the lasing threshold and input-output characteristics of the Raman laser are studied. For instance, for a propagation loss of 0.5 dB/cm, conversion efficiencies as high as 56% is predicted. The predicted optimum cavity (waveguide) length at 2.0 dB/cm propagation loss is ~ 3.4 mm. The results of this study predict strong prospects for mid-IR silicon Raman lasers for the mentioned applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analytical modeling of mid-infrared silicon Raman lasers

Fathpour

2012

SPIE Proceedings

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“…As a case in point, we have recently reported that fluctuations of Raman amplified pulses, in the presence of a noisy pump, follow extremevalue statistics -highly non-Gaussian distributions that have been surprisingly successful in describing the frequency of occurrence of extreme events ranging from stock market crashes and natural disasters, the structure of biological systems and fractals, and optical rogue waves [58,59]. These distributions predict that events much larger than the mean can occur with significant probability, in stark contrast to the ubiquitous Gaussian distribution which heavily favors events close to the mean.…”

Section: Resultsmentioning

confidence: 99%

Nonlinear silicon photonics

Tsia

Jalali

2010

SPIE Proceedings

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An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion -functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

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“…The γ ( t ) for thermal sources such as our own Sun is a Poisson-like process with ( M , B ) ≈ (0, 0), and produces an RC output ϕ ( t ) which also has ( M , B ) ≈ (0, 0). However non-thermal sources, such as that recently produced in laboratory silicon systems using stimulated and coherent anti-Stokes Raman scattering24, would not be restricted to having ( M , B ) ≈ (0, 0) and hence merit investigation. For simplicity our model considers each arriving photon as creating one initial excitation: This avoids adding another layer of statistical analysis for the absorption and does not change our main conclusions.…”

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confidence: 99%

Extreme alien light allows survival of terrestrial bacteria

Johnson

Zhao

Caycedo

et al. 2013

Sci Rep

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Photosynthetic organisms provide a crucial coupling between the Sun's energy and metabolic processes supporting life on Earth. Searches for extraterrestrial life focus on seeking planets with similar incident light intensities and environments. However the impact of abnormal photon arrival times has not been considered. Here we present the counterintuitive result that broad classes of extreme alien light could support terrestrial bacterial life whereas sources more similar to our Sun might not. Our detailed microscopic model uses state-of-the-art empirical inputs including Atomic Force Microscopy (AFM) images. It predicts a highly nonlinear survivability for the basic lifeform Rsp. Photometricum whereby toxic photon feeds get converted into a benign metabolic energy supply by an interplay between the membrane's spatial structure and temporal excitation processes. More generally, our work suggests a new handle for manipulating terrestrial photosynthesis using currently-available extreme value statistics photon sources.

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Extreme value statistics in silicon photonics

Cited by 10 publications

References 17 publications

Analytical modeling of mid-infrared silicon Raman lasers

Analytical modeling of mid-infrared silicon Raman lasers

Nonlinear silicon photonics

Extreme alien light allows survival of terrestrial bacteria

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