Extremely Enhanced Nonlinear Current–Voltage Properties of Tb‐Doped <scp><scp>CaCu</scp></scp>3<scp><scp>Ti</scp></scp>4<scp><scp>O</scp></scp>12 Ceramics

Thongbai, Prasit; Boonlakhorn, Jakkree; Putasaeng, Bundit; Yamwong, Teerapon; Maensiri, Santi

doi:10.1111/jace.12157

Cited by 39 publications

(5 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This value is comparable to the value of α ≈17 (calculated over the range of 1–10 mA/cm 2 ) for the Sn‐doped CCTO (CaCu 3 Ti 3.8 Sn 0.2 O 12 ) ceramic . However, α of the CCTO50‐1h sample is lower than that of the Tb‐doped CCTO (Ca 0.775 Tb 0.15 Cu 3 Ti 4 O 12 ) ceramic for which α = 29.67 …”

Section: Resultssupporting

confidence: 70%

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process

et al. 2014

Self Cite

View full text Add to dashboard Cite

Pure CaCu3Ti4O12 was successfully prepared by a glycine‐nitrate process using a relatively low calcination temperature and short reaction time of 760°C for 4 h. Fine‐grained CaCu3Ti4O12 ceramics with dense microstructure and small grain size were obtained after sintering for 1 h. The nonlinear coefficient of a fine‐grained CaCu3Ti4O12 ceramic calculated in the range 1–10 mA/cm2 was found to be very high of ~16.39 with high breakdown electric field strength of 1.46 × 104 V/cm. This fine‐grained CaCu3Ti4O12 ceramic also exhibited a very low loss tangent of 0.017 at 20°C with temperature stability over the range −55°C to 85°C. The grain growth rate of the CaCu3Ti4O12 ceramics was found to be very fast after increasing the sintering time from 1.5 to 3 h, leading to formation of a coarse‐grained CaCu3Ti4O12 ceramic with grain size of about 100–200 μm. The dielectric permittivity of this coarse‐grained ceramic was found to be as high as 1.03 × 105 with a low loss tangent of 0.054.

show abstract

Section: Resultssupporting

confidence: 70%

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process

et al. 2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…Therefore, the change in dielectric properties of the Nb doped CCTO ceramics can be correlated to microscopic changes in microstructure of ceramics, i.e., decline of ε r is primarily attributed to decrease in average grain size. Such dielectric behavior is similar to that observed in pure and doped CCTO ceramics [40,[45][46][47][48][49]. But, these results indicate that Nb substitution in Ti site of CCTO have not only an impact on its microstructure, but also pointedly affect its dielectric properties.…”

Section: Dielectric Properties Of Sintered Pelletssupporting

confidence: 83%

Tunable dielectric properties of niobium (Nb) doped CaCu3Ti4O12 nanocubes synthesized via facile molten salt route

Sen¹

2019

SN Appl. Sci.

View full text Add to dashboard Cite

Doping induced tuning of dielectric constant of nanomaterials has huge technological importance, but its realization is limited by lack of synthetic protocols for uniform dielectric nanostructures, with controlled doping. Here, nanocubes of niobium doped calcium copper titanate (Nb-doped CCTO) is realized through molten salt route and the effect of Nb doping on tunability of dielectric behavior is reported. Particular focus is to minimize the significant dielectric loss which is practical concern of CCTO based giant dielectric materials. The structural and compositional properties of as synthesized powders and sintered pellets are analyzed by X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. XRD analysis carried out on the samples confirmed single phase formation and indicated overall increase in lattice constant. The surface morphology of the molten salt derived product shows nanocubes with size in the range of 250-280 nm. Energy dispersive X-ray spectroscopy pattern confirmed the presence of Nb in doped samples. The dielectric response of sintered CaCu 3 Ti 4−x Nb x O 12 samples studied by precision LCR meter suggest that although Nb substitution in CCTO reduces the dielectric constant but dielectric loss had lower values than those of undoped CCTO.

show abstract

“…(2) and the measuring method. As shown in Figure 11(b), some reports of high α are actually $5 in the current range 0.1-1 mA/cm in lnJ-lnE plots [24][25][26]. The reported high α might also originate from positive feedback of heat generated from thermal emission process at grain boundary.…”

Section: Enhanced Electrical Nonlinearitymentioning

confidence: 86%

Breakdown Characteristics of Varistor Ceramics

Li¹,

Wu²,

Huang³

2019

Electrical and Electronic Properties of Materials

View full text Add to dashboard Cite

Breakdown characteristics are of great importance for varistor ceramics, which largely depend on Schottky barriers at grain boundaries. In order to enhance breakdown performance for meeting the requirement of device miniaturization, different doping methods are introduced to not only restrict grain size from additional phase but also manipulate defect structure of Schottky barrier at grain boundaries from substitution. Distribution of barriers is another key point affecting breakdown characteristics in varistor ceramics. Dimensional effect, which is detected in not only ZnO ceramics but also CaCu 3 Ti 4 O 12 ceramics, is practically and theoretically found to be closely correlated with uniformity of grains. As a result, breakdown characteristics of varistors are dominated by combination effect of single barrier performance and spatial barrier distribution. In this chapter, enhanced breakdown field in Ca x Sr 1Àx Cu 3 Ti 4 O 12 ceramics, in situ synthesized CaCu 3 Ti 4 O 12-CuAl 2 O 4 ceramics, and CaCu 3 Ti 4 O 12-Y 2/3 Cu 3 Ti 4 O 12 composite ceramics are investigated from the aspect of Schottky barriers at grain boundaries. In addition, dimensional effect is found in both ZnO and CaCu 3 Ti 4 O 12 ceramics, which are investigated from grain size distribution through theoretical and experimental analysis.

show abstract

Extremely Enhanced Nonlinear Current–Voltage Properties of Tb‐Doped CaCu₃Ti₄O₁₂ Ceramics

Cited by 39 publications

References 20 publications

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process

Tunable dielectric properties of niobium (Nb) doped CaCu3Ti4O12 nanocubes synthesized via facile molten salt route

Breakdown Characteristics of Varistor Ceramics

Contact Info

Product

Resources

About

Extremely Enhanced Nonlinear Current–Voltage Properties of Tb‐Doped CaCu3Ti4O12 Ceramics

Cited by 39 publications

References 20 publications

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu3Ti4O12 Ceramics Prepared by a Glycine‐Nitrate Process

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu3Ti4O12 Ceramics Prepared by a Glycine‐Nitrate Process

Tunable dielectric properties of niobium (Nb) doped CaCu3Ti4O12 nanocubes synthesized via facile molten salt route

Breakdown Characteristics of Varistor Ceramics

Contact Info

Product

Resources

About

Extremely Enhanced Nonlinear Current–Voltage Properties of Tb‐Doped CaCu₃Ti₄O₁₂ Ceramics

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process