International Electron Devices Meeting. IEDM Technical Digest
DOI: 10.1109/iedm.1997.649459
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Extremely high-Q tunable inductor for Si-based RF integrated circuit applications

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Cited by 34 publications
(21 citation statements)
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“…This results indicate that maximizing the Q p leads to a higher G MSG , which agreed with the simple analysis of maximum available gain discussed in [8]. This, however, can be disadvantage of tunable inductors [5,6] because the power coupled between the inductor and other components [9] can be larger than conventional inductors when the quality factor of the tunable inductors is maximized. The input impedance is given by…”
Section: Resultssupporting
confidence: 77%
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“…This results indicate that maximizing the Q p leads to a higher G MSG , which agreed with the simple analysis of maximum available gain discussed in [8]. This, however, can be disadvantage of tunable inductors [5,6] because the power coupled between the inductor and other components [9] can be larger than conventional inductors when the quality factor of the tunable inductors is maximized. The input impedance is given by…”
Section: Resultssupporting
confidence: 77%
“…The tuning technique can provide impedance matching at a frequency by adjusting the input power to drive the coupled inductor. Note that the measurement results reported in [5] reveal that a variety of power levels changes the real and imaginary parts of the input impedance of a tunable inductor. These results show that the proposed tunable transformer is useful for RF IC designs because of its higher performance compared to the conventional transformer used in RF ICs.…”
Section: Resultsmentioning
confidence: 99%
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