Extremely Large Magnetoresistance in Boron-Doped Silicon

Schoonus, Jjhm Jurgen; Bloom, FL Francisco; Wagemans, W Wiebe; Swagten, Hjm Henk; Koopmans, B.

doi:10.1103/physrevlett.100.127202

Cited by 93 publications

(94 citation statements)

References 18 publications

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“…In In stark contrast to many MR phenomena observed in several other material systems in which the strength of the MR tends to quench with increasing temperature [14,[23][24][25], in our short InAs channels the large MR is observed over an extended temperature range. This is illustrated in Fig.…”

Section: Resultsmentioning

confidence: 52%

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

et al. 2014

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We report on hot electron induced impact ionization and large room-temperature magnetoresistance (MR) in micron-sized channels of n-type high-mobility InAs (μ = 3.3 m 2 V −1 s −1 at T = 300 K): the MR reaches values of up to 450% in magnetic fields of 1 T and applied voltages of ß1 V and is weakly dependent on temperature. We present Monte Carlo simulations of the hot electron dynamics to account for the large MR and its dependence on the sample geometry and applied electric and magnetic fields. Our work demonstrates that the impact ionization of electrons at room temperature, under small applied magnetic fields (<1 T) and small voltages (<1 V), can provide an extremely sensitive mechanism for controlling the electrical resistance of high-mobility semiconductors.

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Section: Resultsmentioning

confidence: 52%

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

et al. 2014

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“…Schoonus et al 16 attributed the observed shift to the high-energy region to the fact that the magnetic field shrinks the acceptor wave functions and, thus, leads to a decrease in the overlap of the tales of the functions of neighboring acceptor centers. As a result, the effective energy of acceptor level increases.…”

Section: A Magnetoimpedance: Low Biasmentioning

confidence: 99%

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

et al. 2017

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We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.

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“…It was only recently, however, that a large magnetoresistance (MR) has been reported [1][2][3][4] . MR is the change in resistivity ρ of a material in a magnetic field B relative to the zero field resistivity: ∆ρ/ρ = [ρ(B) − ρ(0)]/ρ(0).…”

Section: Introductionmentioning

confidence: 99%

Finite size suppression of the weak field magnetoresistance of lightly phosphorous-doped silicon

Porter

Marrows

2012

Journal of Applied Physics

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We report magnetoresistance measurements of lightly phosphorous doped silicon in samples that are fabricated from silicon-on-insulator wafers and so confined in one dimension. All three principal magnetic field orientations were studied at 50 and 270 K for thicknesses between 1.5-530 µm, and as thin as 150 nm at 270 K. The weak field magnetoresistance was suppressed in the orientations with the field in the sample plane when the sample is thinner than ∼ 1 µm at 270 K (∼ 10 µm at 50 K).This suppression occurred for samples that are much thicker than the carrier mean free path and the Debye screening length, and the relevant lengthscale is instead the energy relaxation length.

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Extremely Large Magnetoresistance in Boron-Doped Silicon

Cited by 93 publications

References 18 publications

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

Finite size suppression of the weak field magnetoresistance of lightly phosphorous-doped silicon

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