Extremely Low Program Current Memory Based on Self-Assembled All-Inorganic Perovskite Single Crystals

Abstract

Memory devices based on lead halide perovskite have attracted great interests because of their unique current− voltage hysteresis. However, current memory devices based on polycrystalline perovskites usually suffer from large intrinsic electronic current and parasitic leakage current due to the existence of grain boundaries, which further leads to high power consumption. Here, a low-power resistance switching randomaccess memory device is demonstrated by assembling singlecrystalline CsPbBr 3 on Ag electrodes. The assembled structure serves as a bipolar nonvolatile resistance switching memory device with a low program current (∼10 nA), good endurance, long data retention (>10 3 S), and big on/off ratio of ∼10 3 . The low program current results in a power of ∼3 × 10 −8 W, which is much lower than that of polycrystalline perovskite-based devices (10 −1 −10 −6 W). It is found that the formation and annihilation of Ag and bromide vacancy conductive filaments contribute to the significant resistive switching effect. At a low resistive state, the conductive filaments originate from the accumulation of Br − ions at the drain. Furthermore, the conductive filaments are proved to be a cone shape, shrinking from the drain to the source.

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

“…Given its excellent scalability, simple structure, high-endurance cycles, fast operation, and high-density data storage, RRAM is considered an ideal candidate to meet the demands for the promising non-volatile memory of the future. Regarding its application in information capacity, however, there are a variety of issues that need to be addressed, such as retention characteristics, fatigue, and transmission mechanisms [10,11]. In general, one of the most significant advantages of a typical RRAM lies in its simple metal-insulator-metal (MIM) device structure, in which resistive switching (RS) layers are sandwiched between two metal electrodes.…”

Emerging New‐Generation Detecting and Sensing of Metal Halide Perovskites

“…Meanwhile, when MHPs are illuminated, all-optical conversion occurs, as shown in Figure 2f. Under an overloaded external bias and illumination, the ions in the perovskite (I − , Br − , Pb 2+ , MA + ) [74][75][76][77] and electrode (Ag + ) [78,79] migrate out of the ABX 3 perovskite structure, resulting in defect band levels, as shown in Figure 2g, and the resistance changes subsequently. The ions can rapidly migrate in the MHPs as vacancies or interstitials due to low required activation energies, such as 0.1-0.6 eV for I − ion, [75,[80][81][82][83] which are responsible for the low electric field RS through filament formation and annihilation.…”

“…Ion migration can only occur when the switching voltage is greater than the SET or RESET threshold voltage. [74,75,79] When a bias voltage of less than 0.5 V is applied, the ions did not migrate from the CsFAMA ternary perovskite devices, as shown in Figure 2h. [44] Here, the photocurrent could be calculated by the formula…”

Quasi-2D Halide Perovskite Memory Device Formed by Acid–Base Binary Ligand Solution Composed of Oleylamine and Oleic Acid

“…Ag → Ag + +e – ). Subsequently, the oxidized metal is reduced by electrons from the cathode to forms a cone-shaped metal filament (e.g., Ag + + e – → Ag). − It has also been reported that the general RESET process is caused by halide vacancies or metal ruptures of the vertexes of cone-shaped filaments based on bias in the opposite direction of the SET bias. − These mechanisms have been described using X-ray diffraction (XRD), , time-of-flight secondary ion mass spectroscopy, Kelvin probe force microscopy, conducting atomic force microscopy (c-AFM), and transmission electron microscopy …”

“…19−21 It has also been reported that the general RESET process is caused by halide vacancies or metal ruptures of the vertexes of coneshaped filaments based on bias in the opposite direction of the SET bias. 16−21 These mechanisms have been described using X-ray diffraction (XRD), 17,22 time-of-flight secondary ion mass spectroscopy, 20 Kelvin probe force microscopy, 23 conducting atomic force microscopy (c-AFM), 16 and transmission electron microscopy. 24 To improve the performance and stability of OHP devices, numerous studies on controlling the morphology and defects of OHP thin films for resistive memory devices have been conducted systematically.…”