Extremely low specific contact resistivities for <i>p</i>-type GaSb, grown by molecular beam epitaxy

Tadayon, B.; Kyono, C. S.; Fatemi, M.; Tadayon, S.; Mittereder, J.

doi:10.1116/1.587979

Cited by 19 publications

(12 citation statements)

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“…Ohmic contacts to p-GaSb doped in the range of 8 ϫ10 16 Ϫ1ϫ10 19 cm Ϫ3 are provided by thermal evaporation of several metals and alloys of Au, Ag and In after annealing in the range of 250-350°C for 10-30 min. [280][281][282] The specific contact resistivity c varies in the range of 10 Ϫ4 - 283 fabricated metal contacts of Cr/Au, Ti/Pt/Au and Au on p-GaSb by MBE. For Au contacts, c in the range of 1.4-7.8ϫ10 Ϫ8 ⍀ cm 2 have been obtained which are the lowest values ever reported so far for p-GaSb.…”

Section: Fabrication Techniques 1 Ohmic Contactsmentioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 m. The III-V ternaries and quaternaries ͑AlGaIn͒͑AsSb͒ lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication.

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Section: Fabrication Techniques 1 Ohmic Contactsmentioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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“…Photolithography was performed to prepare circular transfer length method ͑CTLM͒ patterns for measuring specific contact resistance. Gap spacings of 2,4,8,14,20,30, and 50 m were used. Next, the samples were subjected to ͑1:1͒ HCl:H 2 O for 30 s and then ͑1:1͒ HF:H 2 O for 30 s to remove surface oxides followed by a rinse in DI water.…”

Section: Methodsmentioning

confidence: 99%

“…Next, the samples were subjected to ͑1:1͒ HCl:H 2 O for 30 s and then ͑1:1͒ HF:H 2 O for 30 s to remove surface oxides followed by a rinse in DI water. 2 The samples were then promptly loaded into a vacuum chamber with a base pressure of 10 Ϫ7 Torr, and the films were deposited by dc magnetron sputtering. After deposition, samples were soaked in acetone and methanol with ultrasonic agitation to remove the photoresist, rinsed with DI water, and blown dry with compressed N 2 .…”

Section: Methodsmentioning

confidence: 99%

“…1 While there are no reports to our knowledge on ohmic contacts to p-InGaSb, studies of ohmic contacts to p-GaSb have been described by several authors. Ohmic contacts to p-GaSb are easily obtained due to Fermi-level pinning near the valence band edge, and specific contact resistances below 10 Ϫ7 ⍀ cm 2 have been reported by Tadayon et al 2 for Au/p-GaSb contacts annealed at 200°C for 60 s. These contacts retained a low resistance when held at 100°C for 10 h, but they degraded when annealed at 250°C for 60 s, conditions even milder than those that Milnes et al 3 found lead to degradation of Au/p-GaSb contacts ͑350°C for 30 h͒. Both findings are consistent with the work of Piotrowska et al, 4 who report poor metallurgical stability of Au and Au-based contacts to GaSb.…”

Section: Introductionmentioning

confidence: 92%

“…Their Ag/p-GaSb ohmic contacts with a specific contact resistance of 5ϫ10 Ϫ6 ⍀ cm 2 were stable for at least 30 h at 350°C. 3 Of course, desirable electrical behavior does not guarantee that a contact is shallow, and in a later study of Ag/n-GaSb contacts by Li and Milnes, 5 the formation of Ag-Ga and Ag-Sb phases were observed by x-ray diffraction even after annealing for only 10 s at 400°C.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Design of a shallow thermally stable ohmic contact to p-type InGaSb

Wang¹,

Mohney²,

Hull³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Ohmic contacts to p-type InGaSb have been investigated. The factors that influence the contact resistance, thermal stability, and shallowness of the contacts are examined. The most desirable contact studied in this work employs three layers. A very thin layer of palladium is deposited on the p-InGaSb first and is found to lower the resistance at the metal/semiconductor interface. The next layer is W, which is predicted to be in thermodynamic equilibrium with InGaSb and which serves as a diffusion barrier to protect the semiconductor from the reaction with the final capping layer. The final capping layer is a 100 or 150 nm Au layer. The Au lowers the metal sheet resistance, which we have found both experimentally and through modeling to influence the contact resistance measurements, and the Au layer provides a contact surface that does not oxidize. The contact resistance of the as-deposited Pd/W/Au (5/50/145 nm) contact is 0.08 Ω mm (corresponding to a specific contact resistance of <3×10−7 Ω cm2), while the more thermally stable Pd/W/Au (5/145/100 nm) contact exhibits a contact resistance of 0.08 Ω mm only after annealing at 250 °C for 3 h, in both cases on a p-In0.25Ga0.75Sb layer with a semiconductor sheet resistance of approximately 300 Ω/□. The thermal stability of the Pd/W/Au contacts was also examined. The Pd/W/Au (5/145/100 nm) contacts remained shallow and exhibited no measurable electrical degradation when aged at 250 °C in N2 for 100 h, while they survived at 250 °C for 14 days in sealed, evacuated, quartz tubes.

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Ni, Pd, or Pt as contact materials for GaSb and InSb semiconductors: Phase diagrams

Ipser

Richter

2003

J. Electron. Mater.

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As processing, and even use, of semiconductor devices usually includes the exposure to elevated temperatures, interface reactions often occur, especially during metallization and further heat treatment. It is thus important to understand the corresponding phase equilibria of the involved elements. We present here the phase diagrams of Ni, Pd, and Pt with GaSb and InSb; experimental results in the systems Ga-M-Sb and In-M-Sb (M ϭ Ni, Pd, Pt) are summarized and are discussed in the context of contact chemistry. For GaSb and InSb, it is found that, from a thermodynamic point of view, binary and ternary compounds in equilibrium with the corresponding semiconductor would be the best choice for contact materials as these contacts will remain stable even after long exposure to elevated temperatures.

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Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy

Cited by 19 publications

References 0 publications

The physics and technology of gallium antimonide: An emerging optoelectronic material

The physics and technology of gallium antimonide: An emerging optoelectronic material

Design of a shallow thermally stable ohmic contact to p-type InGaSb

Ni, Pd, or Pt as contact materials for GaSb and InSb semiconductors: Phase diagrams

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