2021
DOI: 10.1109/jeds.2020.3046953
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Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications

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Cited by 9 publications
(4 citation statements)
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“…Several recent studies have demonstrated the efficiency of unlicensed spectrum bands in the mm wave range. It uses extremely low power but provides large transmission distances and high data rates [60,61]. One limitation of the mm wave spectrum is that the data rate is strongly affected by weather conditions, especially rain [62].…”
Section: Communication Technologymentioning
confidence: 99%
“…Several recent studies have demonstrated the efficiency of unlicensed spectrum bands in the mm wave range. It uses extremely low power but provides large transmission distances and high data rates [60,61]. One limitation of the mm wave spectrum is that the data rate is strongly affected by weather conditions, especially rain [62].…”
Section: Communication Technologymentioning
confidence: 99%
“…Aiming to achieve these goals, new breakout architectures and technologies are mentioned for the first time as mm-wave [35], device-centric architecture [36], and massive MIMO [37]. In addition, emerging solutions and technologies are integrated to enhance performance, such as SDN [38], D2D [39], and ICN [40], and minimize unnecessary network traffic, save energy, and enhance data rates.…”
Section: Roadmap To 6gmentioning
confidence: 99%
“…New technology nodes, e.g., the 90/65 nm complementary metal–oxide–semiconductor (CMOS) process, enable a high cutoff and oscillation frequencies that realize mmWave integrated circuits and transceivers [ 25 ]. Using 12 nm fin field-effect transistor (FinFET) technology, a maximum oscillation frequency of 315 GHz is reported [ 26 ]. In [ 27 ], a survey of mmWave transceivers is presented, and the architectural and circuit considerations for 5G mmWave transceivers are discussed.…”
Section: Background Theory and Modelingmentioning
confidence: 99%