Extremely promising monolayer materials with robust ferroelectricity and extraordinary piezoelectricity: δ-AsN, δ-SbN, and δ-BiN

Abstract

Low-dimensional ferroelectric materials, the mainstay of current high-density non-volatile memory, sensors, and nanoscale electronics, have attracted tremendous attention recently. Through employing evolutionary algorithm and first-principles calculations, we report three novel...

Room-Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-Metallic Monolayer CrTe

“…The spontaneous polarization and potential barrier are P s = 7 × 10 –10 C/m and E G = 729 meV, respectively. The value of P s for monolayer CrTe is higher than that of some known 2D FEs such as MX (M = Ge, Sn; X = S, Se), δ-(As,Sb,Bi)­N, group III–V monolayers (III = Ga, In; V = P, As, Sb), other 2D honeycomb binary compounds, and some elemental group V monolayers . The energy barrier for polarization switching is higher than most of the known 2D FE materials and comparable to the value in two-dimensional In 2 Se 3 …”

High‐pressure and high‐temperature synthesis of crystalline Sb3N5

“…[15,16] Moreover, further interest concerns the intriguing properties predicted by calculations for the different 2D polymorphs of single layer SbÀ N materials such as α-, [17] β- [18] and δ-SbN. [19,20] Nevertheless, whereas the formation of diatomic molecular SbN units [21,22] and amorphous films of SbN, [23,24] SbN 3 [14,24,25] and Sb 1À x N x (x = 0.17, 0.41, 0.45) compositions [26] has been reported in literature, excluding antimony azide Sb(N 3 ) 3 , [27,28] to the best of our knowledge, no extended crystalline compound entirely formed by antimony and nitrogen has ever been conclusively synthesized and structurally characterized by X-ray diffraction (XRD) so far. [29] Theoretically, the increase of the chemical potential of a Ncontaining precursor has been proposed by Sun et al as an effective route to the synthesis of new metastable inorganic crystalline materials, including antimony nitride SbN [11] and other predicted ternary nitrides.…”

“…Beyond the pure advancement of fundamental chemical knowledge about the chemistry of Sb and N, understanding the stability of the Sb−N system in terms of structure, composition and metastability, is technologically relevant for the synthesis of phase change memory and thermoelectric materials [12–14] and of semiconductors for applications in optoelectronics, photovoltaics and photoelectrochemical cells [15,16] . Moreover, further interest concerns the intriguing properties predicted by calculations for the different 2D polymorphs of single layer Sb−N materials such as α ‐, [17] β ‐ [18] and δ ‐SbN [19,20] …”

Elemental Semimetal Ferroelectricity in Buckled Carbon Monolayers: Implications for Flexible Field-Effect Transistors

“…The previous experimental and theoretical studies on 2D ferroelectric materials usually have been limited to multielemental compounds, such as WTe 2 , 23 In 2 Se 3 , 24 CuInP 2 S 6 , 25 and XN (X = As, Sb, Bi). 26 This is because elemental materials tend to form high-symmetry structures without polarization. In fact, ferroelectricity results from the violation of spatial inversion symmetry.…”

“…These studies highlight the potential of ferroelectricity in elemental systems. The previous experimental and theoretical studies on 2D ferroelectric materials usually have been limited to multielemental compounds, such as WTe 2 , In 2 Se 3 , CuInP 2 S 6 , and XN (X = As, Sb, Bi) . This is because elemental materials tend to form high-symmetry structures without polarization.…”