Extremely reduced nonlinear
            <i>K</i>
            -factor in high-speed strained layer multiquantum well DFB lasers

Hirayama, Y.; Morinaga, M.; Suzuki, N.; Nakamura, Masaru

doi:10.1049/el:19910548

Cited by 20 publications

(2 citation statements)

References 7 publications

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“…The lowest K-factor observed for these lasers is not significantly below the best values reported for bulk lasers, especially for long-wavelength devices [21,54]. Moreover, there is a large variation, from 0.13 ns to 2.4 ns, whereas for bulk lasers the K-factors remain within the range 0.2 ns to 0.4 ns [29,40,54,55]. Well-barrier hole burning [56] may be an additional structure-dependent contribution to the intrinsic gain-compression coefficient, which is shown by numerical models [57,58] to be further enhanced in strained MQW lasers.…”

Section: Quantum-well Lasers and Carrier-transport Effectsmentioning

confidence: 67%

Fast phenomena in semiconductor lasers

2000

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Although diode lasers are almost ideal sources for ultrahigh-speed data communication systems, system performance remains critically dependent on the quality of the optical pulses that they generate. Uniquely among lasers, the output power can be modulated directly by modulating the diode current. However, this leads to relaxation oscillations and a roll-off at high frequencies that is superimposed on the frequency response of the drive circuit. This is limited by parasitics and maximum modulation frequencies range from 1 to 70 GHz, depending on the type of laser and its packaging. The higher values are obtained with short cavity lengths and tight optical confinement, the highest frequencies being achieved in vertical-cavity devices. Modulation bandwidth is usually limited by circuit parasitics, device heating and the maximum power-handling capability of the laser facets.The generation of picosecond and femtosecond pulses demands special techniques and three-gain switching, Q-switching and mode locking-are discussed in detail, with their relative advantages and disadvantages compared. Very short pulses inherently contain a significant spread of wavelengths and their generation requires the optical gain in the laser medium to extend across that wavelength range. While diode lasers satisfy this criterion better than many other types, the effect of gain non-linearities and carrier-transport effects prevent the Fourier-transform limit from being achieved in practice. As a result, external pulse-compression techniques, which exploit the detailed temporal and spectral properties of the laser pulses, such as frequency chirping, self-phase modulation and group velocity dispersion, are becoming more important, and diode lasers are increasingly challenged as primary sources by compact, efficient, diode-pumped solid-state lasers.The paper summarizes the levels of maximum pulse power and minimum duration that have been achieved using the various techniques.

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Section: Quantum-well Lasers and Carrier-transport Effectsmentioning

confidence: 67%

Fast phenomena in semiconductor lasers

2000

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“…In a QD lasers, the gain compression factor is reported to be at least 10 times that in a typical QW laser [35]. Consequently, the lowest K-factor reported in QD lasers is in the range of 0.7-0.9 ns [36], [37], while the lowest K-factor in QW lasers is in the range of 0.2-0.3 ns [38], [39]. The significant damping in QD lasers causes most modulation experiments to show a lack of pronounced relaxation oscillation peaks as shown in Fig.…”

Section: Isolator-free Operation With Quantum Dot Lasersmentioning

confidence: 98%

Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications

Zhang

Jung

Norman

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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The linewidth enhancement factor (α H ) is an important parameter for semiconductor lasers. In this paper, we investigate, both theoretically and experimentally, the key parameters that affect α H of InAs/GaAs quantum dot lasers. Both dot uniformity and doping density are found to be critical in achieving small α H in quantum dot lasers. The prospects for quantum dot lasers in isolator-free and narrow linewidth applications are also discussed.

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A frequency response model in multiquantum well lasers with unequilibrium carrier transport

Suzuki

Ishikawa

1994

Opt Quant Electron

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Extremely reduced nonlinear K -factor in high-speed strained layer multiquantum well DFB lasers

Cited by 20 publications

References 7 publications

Fast phenomena in semiconductor lasers

Fast phenomena in semiconductor lasers

Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications

A frequency response model in multiquantum well lasers with unequilibrium carrier transport

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