F contamination effects on intrinsic and extrinsic gate oxide reliability

Ghidini, G.; Drera, D.; Maugain, F.

doi:10.1109/irws.1995.493581

Cited by 3 publications

(4 citation statements)

References 2 publications

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“…The tunneling current of the 5 min sample was found to be about three orders of magnitude higher than that of the control sample, due to the lower barrier height of the gate oxide after CF 4 pretreatment. 14 Under positive gate bias, the leakage current in the low-electric-field (4-6 MV/cm) region decreases as the plasma treatment time increases. The improvement was attributed to the fluorine incorporation at the SiO 2 /Si interface, resulting in Si-F bond formation.…”

Section: Resultsmentioning

confidence: 99%

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Growing High-Performance Tunneling Oxide by CF[sub 4] Plasma Pretreatment

Chang

Lee

Lei

et al. 2003

J. Electrochem. Soc.

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Thin tunneling oxides grown on a CF 4 pretreated silicon substrate were prepared and investigated for the first time. The tunneling current of the CF 4 -treated oxide is about three orders of magnitude higher than that of thermal oxide; furthermore, the stressinduced anomalous current and low electric field leakage current were greatly suppressed. The improvement was attributed to the incorporation of fluorine in the oxide region. Both control and CF 4 -treated devices exhibited comparable channel mobility. However, pretreatment with CF 4 markedly improved the reliability of the insulator. This oxide is highly promising for fabricating low-voltage electrically erasable and programmable read-only memories ͑EEPROMs͒ without increasing the complexity of the process.

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Section: Resultsmentioning

confidence: 99%

“…Clearly, the CF 4 -pretreated sample was better able to resist hot carrier stress than the control, perhaps because more fluorine was incorporated into the former. 2,14 Figure 10 compares the transconductance degradation in more detail. This figure shows the degradation of maximum transconductance.…”

Section: Resultsmentioning

confidence: 99%

Growing High-Performance Tunneling Oxide by CF[sub 4] Plasma Pretreatment

Chang

Lee

Lei

et al. 2003

J. Electrochem. Soc.

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“…Since higher F incorporation could reduce the defects and the dangling bonds in the oxides [4], [13], [14]; therefore, the leakage current at the low electric field regime is suppressed. Additionally, the barrier height of the oxide is also lowered [8] and a higher tunneling current will be observed. Fig.…”

Section: Methodsmentioning

confidence: 99%

“…The fluorinated oxides were investigated and found to have lower barrier height, especially for thin oxide [8]. Fluorinated oxides had been widely studied for their good resistance against ionized radiation and hot electron [9]- [12]; additionally, the nitride oxides grown on F-implanted silicon was found to be capable of suppressing anomalous leakage current [4].…”

Section: Introductionmentioning

confidence: 99%

Thin tunnel oxide grown on silicon substrate pretreated by CF₄ plasma

Lee

Lei

Lee

2001

IEEE Electron Device Lett.

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High tunneling current and large resistance against stress were the main issue of tunnel oxide for scaling down the operation voltage of EEPROMs. In this letter, thin-tunnel oxides grown on a CF 4 pretreated silicon substrate were prepared and investigated for the first time. The fabricated oxide has about three orders of tunneling current higher than that of control one; furthermore, the stress induced anomalous and low electric field leakage currents were greatly suppressed. The improvement could be contributed to F-incorporation in oxide. This type of oxide is suitable for fabricating low-voltage EEPROMs and less process complexity was added.Index Terms-Anomalous current, CF 4 fluorinated oxide, lowvoltage EEPROM, plasma pretreatment, SILC, tunnel oxide.

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