Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin SiO2 cover layer and subsequent rapid thermal annealing. Gallium accumulation at the SiO2/Si and SiO2/Ge interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 67 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are dierent.