F induced layer disordering of GaAs/InGaP quantum wells

Das, Utpal; Pathangey, B.; Osman, Ziad; Anderson, Timothy J.

doi:10.1063/1.120008

Cited by 9 publications

(6 citation statements)

References 11 publications

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“…The various grating parameters i.e., duty cycle, number of grating periods, and perturbation in refractive index are optimized for the single mode waveguide grating. The parameter values D o In-Ga = 61 × 10 −4 m 2 s −1 , D o P-As = 1.8 × 10 −7 m 2 s −1 (Das et al 1997) and E a In-Ga = 3.20 eV, E a P-As = 2.38 eV (Fancis et al 1993) has been assumed. An F-impurity concentration of 10 18 cm −3 suitable for a dose rate of 3 × 10 15 cm −2 at implantation energy ∼ 125 keV, has been used in this proposed structure for simulation.…”

Section: Resultsmentioning

confidence: 99%

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Quantum well intermixed waveguide grating

Sonkar

Das

2011

Opt Quant Electron

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A waveguide grating have been designed suitable for Coarse Wavelength Division Multiplexing applications in which the refractive index is perturbed by the spatial tailoring of the band gap with fluorine ion implanted quantum well intermixing of the In 0.95 Ga 0.05 As 0.10 P 0.90 /InP multi quantum well structure. The gratings have been modeled using coupled mode theory and diffusion equations and Schrödinger wave equations are used to model quantum well energy while interdiffusion. A four channel waveguide grating from 1,550 to 1,610 nm at a span of 20 nm have been simulated with a channel bandwidth of 13 nm and a cross talk of −5 to −10 dB.

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Section: Resultsmentioning

confidence: 99%

“…F implanted waveguides on InP lattice matched quantum well are also discussed in (Bradshaw et al 1992). It has also been observed that detrimental implantation damage can be cured under pulse anneal conditions (Das et al 1997).…”

Section: Quantum Well Intermixingmentioning

confidence: 98%

Quantum well intermixed waveguide grating

Sonkar

Das

2011

Opt Quant Electron

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“…A redshift was observed in an InGaAsP / InP QW structure by Zn diffusion, 7 and also in GaAs/ InGaP multiple QWs by thermal annealing 8 or fluorine implantation followed by annealing. 9 However, the k parameter, under the case of redshift, has never been reported.…”

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confidence: 99%

Argon plasma exposure enhanced intermixing in an undoped InGaAsP∕InP quantum-well structure

Nie

Mei

Tang

et al. 2006

Journal of Applied Physics

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Intermixing in an undoped InGaAsP / InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 °C, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 °C when the group V sublattice interdiffusion becomes appreciable.

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“…In recent years, great effort has been put in using DFQW as a tool. Last year, several remarkable papers have been published on advancing the intermixing process and technique [1][2][3][4][5][6][7][8][9][10][11][12][13]60]. The interdiffusion mechanism and determination of the diffusion rate as well as their understanding are also being studied [14][15][16][17][18][19][20][21].…”

Section: Ion Implantation A1gainpmentioning

confidence: 99%

“…F implantation induced Ga/InGaP QW disordering has been performed in conventional furnace and in lamp annealing enviroment [6]. Group-V intermixing is found to be substantially enhanced for certain implantation and annealing conditions.…”

Section: Ion Implantationmentioning

confidence: 99%

Quantum well intermixing: materials modeling and device physics

Li¹

1998

Physics and Simulation of Optoelectronic Devices VI

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Quantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the heterointerface. The intermixed structures created by both impurity induced and impurity free or vacancy promoted processes have recently attracted high attention. The mterdiffusion mechanism is no longer confmed to a single phase diffusion for two constituent atoms, but it can now consist of two or multiple phases and/or for multiple species, such as three cations interdiffusion and two pairs of cation-anion interdiffusion. A review on the impact of intermixing on device physics is presented with many interesting features. For instance, both compressive or tensile strain materials and both blue or red shifts in the bandgap can be achieved depending on the types of intermixing. The recent advancement in intermixing modified optical properties, such as absorption, refractive index as well as electro-optics effects are discussed. In addition, this paper will place a strong emphasis on the device application of the intermixing technology. The advantage of being able to tune the material provides a way to improve the performance of photodetectors and modulators. Attractive distributed-feedback and vertical cavity laser dynamics have been shown due to some unique device physics of the quantum well intermixing. Several state-ofthe-art results will be summarized with an emphasis on its future development and directions.

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F induced layer disordering of GaAs/InGaP quantum wells

Cited by 9 publications

References 11 publications

Quantum well intermixed waveguide grating

Quantum well intermixed waveguide grating

Argon plasma exposure enhanced intermixing in an undoped InGaAsP∕InP quantum-well structure

Quantum well intermixing: materials modeling and device physics

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