F−-ion conducting composite material for chemical sensors based on LaF3 and tetrafluoroethylene

Vasiliev, A. A.; Godovski, D.Yu.; Bezmelnitsyn, V.N.; Gazkov, V.S.

doi:10.1016/0925-4005(93)85129-x

Cited by 4 publications

(8 citation statements)

References 2 publications

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“…This is also consistent with a structure emerging at about 36 to 37 eV in Figure b, which is associated with La 5s in oxofluorides . The formation of oxofluorides has already been observed in literature, ,, but this was mainly associated with the contamination of oxygen during the growth of the film. In the present case, we show that even if the pristine film is pure, substitution of fluorine with oxygen takes place following irradiation.…”

Section: Resultssupporting

confidence: 89%

“…Depth profiling of thin films by XPS is usually obtained through sputtering with noble gas atoms, typically Ar + . This has been used to investigate bulk composition of LaF 3 films in a variety of cases. − , …”

Section: Resultsmentioning

confidence: 99%

“…Compared with other fluorides, because of the high mobility of F – ions and the presence of vacancies in the lattice, LaF 3 appears to be considerably reactive with respect to contaminants and especially to oxygen, giving rise to lanthanum oxides and oxofluoride compounds. These compounds, in turn, substantially modify the conductive properties of the material (with a possible increase in electron conductivity, besides ion conductivity) …”

Section: Introductionmentioning

confidence: 99%

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High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF₃ Superionic Conductor Thin Films on Si

et al. 2014

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LaF 3 films in the 5−40 nm thickness range were grown on Si(111) by molecular beam epitaxy. The substrates were kept at 450 °C during deposition. The films were investigated by highenergy X-ray photoemission flanked by conventional X-ray photoemission, reflection high-energy electron diffraction, and atomic force microscopy. The film growth was layer-by-layer. The surface of the films presented flat terraces, ∼100 nm wide, separated by monatomic steps, reproducing the morphology of the substrate. La 3d, F 1s, O 1s, and Si 2p core levels and valence band were measured by high-energy photoemission to investigate the reactivity of the system and the surface and bulk composition of the films, following varying sample treatments (X-ray irradiation, sputtering, heating). The fresh prepared films resulted of high purity, with no traces of reaction or intermixing at the buried interface between the substrate and the trifluoride. The X-ray beam was seen to induce F depletion at the surface and promote oxide formation. F depletion enhancement was obtained through Ar ion sputtering. An irreversible variation of the film composition was finally observed for samples heated above 300 °C, with the development of La oxides and oxofluorides. These effects were related to the high mobility of F ions in the LaF 3 lattice and to the high tendency of defects formation involving F sites.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF₃ Superionic Conductor Thin Films on Si

et al. 2014

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“…This causes the oxygen contaminants in the reaction system with newly formed La phase and fluorine deficient La fluoride to form La 2 O 3 (O 1 ) and LaOF (O 2 ). [46][47][48]54 The full width at half maximum (FWHM) for these two contributions was observed to be 2.4 eV. The intensity of O 1 component is relatively higher than that of the O 2 component and this can be correlated to a higher proportion of La 2 O 3 when compared to that of LaOF.…”

Section: Resultsmentioning

confidence: 94%

“…The formation of lanthanum oxyfluoride could be possible due to the diffusion of oxygen and high mobility fluorine vacancies in the lattice. [45][46][47][48] The crystallite size of the annealed UCNs was calculated according to the Scherrer equation (Table 1). Irrespective of the dopant (Yb 3+ and Er 3+ ) concentration, the XRD crystallite size was found to be in the range of 31-83 nm.…”

Section: Resultsmentioning

confidence: 99%

Frequency upconversion in catechin assisted $$\hbox {LaF}_{3}$$ LaF 3 : $$\hbox {Yb}^{3+}$$ Yb

et al. 2017

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Yb 3+-Er 3+ codoped lanthanum upconverting nanostructures with varying concentration of dopants have been synthesized by catechin method. The prepared upconverting nanostructures were characterized through XRD, TEM, XPS, NIR absorption, TGA and DSC analysis. TEM study confirms the formation of squareshaped nanoplates with size less than 100 nm. XPS peaks around 830-854 eV further reveal the formation of LaF 3 in the prepared samples. Frequency upconversion spectra from the developed nanostructures corresponding to the 2 H 11/2 , 4 S 3/2 → 4 I 15/2 and 4 F 9/2 → 4 I 15/2 transitions upon 980 nm excitation are reported. Enhancement in the upconversion emission of catechin-based lanthanum nanostructures has been observed when compared with that prepared by ammonium din -octadecyldithiophosphate (AODTP) method.

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Analysis of hydrogen fluoride with SnO2 gas sensors

Godovski

Васильев

Dorofeev³

1994

Sensors and Actuators B: Chemical

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F−-ion conducting composite material for chemical sensors based on LaF3 and tetrafluoroethylene

Cited by 4 publications

References 2 publications

High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF₃ Superionic Conductor Thin Films on Si

High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF₃ Superionic Conductor Thin Films on Si

Frequency upconversion in catechin assisted $$\hbox {LaF}_{3}$$ LaF 3 : $$\hbox {Yb}^{3+}$$ Yb

Analysis of hydrogen fluoride with SnO2 gas sensors

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F−-ion conducting composite material for chemical sensors based on LaF3 and tetrafluoroethylene

Cited by 4 publications

References 2 publications

High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF3 Superionic Conductor Thin Films on Si

High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF3 Superionic Conductor Thin Films on Si

Frequency upconversion in catechin assisted $$\hbox {LaF}_{3}$$ LaF 3 : $$\hbox {Yb}^{3+}$$ Yb

Analysis of hydrogen fluoride with SnO2 gas sensors

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Product

Resources

About

High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF₃ Superionic Conductor Thin Films on Si

High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF₃ Superionic Conductor Thin Films on Si