Fabricating over 7%-efficient Sb2(S,Se)3 thin-film solar cells by vapor transport deposition using Sb2Se3 and Sb2S3 mixed powders as the evaporation source

Hu, Xiaobo; Tao, Jiahua; Wang, Rui; Wang, Youyang; Pan, Yi-Hsuan; Weng, Guoen; Luo, Xianjia; Chen, Shaoqiang; Zhu, Z. Q.; Chu, Junhao; Akiyama, Hidefumi

doi:10.1016/j.jpowsour.2021.229737

Cited by 39 publications

(16 citation statements)

References 36 publications

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“…As shown in Figure a, from AS-1 to AS-7 films, all the XRD spectra exhibited nearly the same diffraction peaks over the entire range, and only the corresponding diffraction angles had a little shift to a larger angle. Because the S atom is larger than the Se atom, the lattice constant of Sb 2 S 3 is also larger than that of Sb 2 Se 3 ; thus, the corresponding diffraction peak position would shift to a higher angle for a similar phase structure, which results in a difference between the standard PDF cards of orthorhombic Sb 2 Se 3 and Sb 2 S 3 . , Besides, all the films showed a preferred orientation of (221), which has been demonstrated to be beneficial for the carrier transport. , The same preferred orientation illustrated that different Se/S ratios of the mixed powder sources would hardly influence the orientation of the deposited films, but influence the phase once the other deposition parameters are the same.…”

Section: Resultsmentioning

confidence: 96%

Vapor Transport Deposition of Sb₂(S,Se)₃ Solar Cells with Continuously Tunable Band Gaps

Pan

Wang

et al. 2022

ACS Appl. Energy Mater.

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Antimony chalcogenide (Sb 2 (S,Se) 3 ) semiconductors have been demonstrated as a promising absorber material for highly efficient inorganic solar cells. Especially, tunable band gaps make them fascinating in the photovoltaic field, thanks to the reciprocal replacement of Se and S atoms. Herein, a series of Sb 2 (S,Se) 3 films with continuously tunable band gaps were reported through a typical vapor transport deposition process. We concluded the relationship of the Se/S ratio between the evaporation source and the deposited film and successfully modified the structural and optical properties of the deposited Sb 2 (S,Se) 3 films with a regulation of the Se/S ratio in the evaporation source. We found that interfacial diffusion during the deposition process was destructive to the device performance. With an optimization of the band gap, a power conversion efficiency of 7.1% was obtained for the Sb 2 (S,Se) 3 single-junction solar cell. This study proposed a reliable way to achieve various Sb 2 (S,Se) 3 films with designated band gaps for the demand of multijunction solar cells.

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Section: Resultsmentioning

confidence: 96%

Vapor Transport Deposition of Sb₂(S,Se)₃ Solar Cells with Continuously Tunable Band Gaps

Pan

Wang

et al. 2022

ACS Appl. Energy Mater.

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“…photovoltaic application due to their low toxicity, high light absorption coefficient, high earth-abundancy and excellent photoelectric properties. [1][2][3][4][5] Combining the advantages of antimony selenide (Sb 2 Se 3 ) and antimony sulfide (Sb 2 S 3 ) semiconductors, Sb 2 (S,Se) 3 solar cells provide a favorable balance between open-circuit voltage (V OC ) and short-circuit current density (J SC ), while maintaining a high fill factor (FF). The band gap of Sb 2 (S,Se) 3 can be adjusted between 1.1 and 1.7 eV by varying the atomic ratio Se/(Se+S), so as to match the solar spectrum in view of the Shockley-Queisser (S-Q) limit.…”

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confidence: 99%

Band Gap and Defect Engineering for High‐Performance Cadmium‐free Sb₂(S,Se)₃ Solar Cells and Modules

Liu

Gao

et al. 2022

Adv Funct Materials

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High‐efficiency antimony selenosulfide (Sb2(S,Se)3) solar cells are often fabricated by hydrothermal deposition and also comprise a CdS buffer layer. Whereas the use of toxic materials such as cadmium compounds should be avoided, both of these issues hinder scaling up to large areas and market access. For this reason, co‐sublimation is studied as a manufacturing process for the active layer as well as the use of Cd‐free buffer layers. To further improve the power conversion efficiency (PCE), a graded bandgap profile is designed for the absorber layer. A V‐shaped graded bandgap in the Sb2(S,Se)3 absorber layer is produced on a TiO2 substrate by co‐sublimation of a controlled varying molar ratio of Sb2Se3 and Sb2S3. Moreover, increasing the Se/S ratio improves the grain size and favorable (hk1) orientations, reduces the detrimental bulk defects in Sb2(S,Se)3 films. Consequently, the optimized Sb2(S,Se)3 solar cells reach a PCE of 9.02%, which is a record value for Cd‐free Sb‐based solar cells. A PCE of 7.15% is further demonstrated for a Sb2(S,Se)3 monolithically interconnected minimodule with an active area of 12.32 cm2. This co‐sublimation graded bandgap technique provides a useful guidance for the optimization of a range of solar cells based on alloy compounds.

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“…The interface lattice mismatches of Sb 2 S 3 and Sb 2 Se 3 double layers are less than 5% for most crystal faces, which can reduce the interface recombination. [ 22,23 ] p‐type Sb 2 Se 3 with hole mobility of 42 cm 2 V −1 s −1 has the capacity for efficient charge transport and collection. [ 24 ] Sb 2 Se 3 film can form good ohmic contact with Au because of the closer valence band level.…”

Section: Introductionmentioning

confidence: 99%

Efficient All‐Inorganic Sb₂S₃ Solar Cells with Matched Energy Levels Using Sb₂Se₃ as Hole Transport Layers

et al. 2022

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Sb2S3 has emerged as a promising light‐absorbing material due to its nontoxicity, low cost, high stability, and absorption coefficient. However, the absorption spectrum ranges and back‐contact barrier between Sb2S3 and Au strongly limit the device performance. p‐type Sb2Se3 has a similar lattice structure and properties as Sb2S3, obtaining absorption expansion and ohmic back contact. Herein, efficient all‐inorganic planar Sb2S3 solar cells with the addition of Sb2Se3 layers are fabricated. The functions of Sb2Se3 as cooperative absorber (400 nm) and hole transport layers (HTL, 80 nm) are further explored. Systematic characterizations indicate that the junction quality and depletion widths of the device with the addition of Sb2Se3 are improved by forming a p–i–n structure. As a result, the all‐inorganic Sb2S3 solar cell with a Sb2Se3 HTL greatly increases the power conversion efficiency from 2.7% to 5.8% and the fill factor from 40% to 55.4%. The additional Sb2Se3/Au interface with matched energy‐level alignments reduces the back‐contact barrier and facilitates hole transport and collection. The present design and methods promote the development of Sb2S3 solar cells.

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Fabricating over 7%-efficient Sb2(S,Se)3 thin-film solar cells by vapor transport deposition using Sb2Se3 and Sb2S3 mixed powders as the evaporation source

Cited by 39 publications

References 36 publications

Vapor Transport Deposition of Sb₂(S,Se)₃ Solar Cells with Continuously Tunable Band Gaps

Vapor Transport Deposition of Sb₂(S,Se)₃ Solar Cells with Continuously Tunable Band Gaps

Band Gap and Defect Engineering for High‐Performance Cadmium‐free Sb₂(S,Se)₃ Solar Cells and Modules

Efficient All‐Inorganic Sb₂S₃ Solar Cells with Matched Energy Levels Using Sb₂Se₃ as Hole Transport Layers

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Fabricating over 7%-efficient Sb2(S,Se)3 thin-film solar cells by vapor transport deposition using Sb2Se3 and Sb2S3 mixed powders as the evaporation source

Cited by 39 publications

References 36 publications

Vapor Transport Deposition of Sb2(S,Se)3 Solar Cells with Continuously Tunable Band Gaps

Vapor Transport Deposition of Sb2(S,Se)3 Solar Cells with Continuously Tunable Band Gaps

Band Gap and Defect Engineering for High‐Performance Cadmium‐free Sb2(S,Se)3 Solar Cells and Modules

Efficient All‐Inorganic Sb2S3 Solar Cells with Matched Energy Levels Using Sb2Se3 as Hole Transport Layers

Contact Info

Product

Resources

About

Vapor Transport Deposition of Sb₂(S,Se)₃ Solar Cells with Continuously Tunable Band Gaps

Vapor Transport Deposition of Sb₂(S,Se)₃ Solar Cells with Continuously Tunable Band Gaps

Band Gap and Defect Engineering for High‐Performance Cadmium‐free Sb₂(S,Se)₃ Solar Cells and Modules

Efficient All‐Inorganic Sb₂S₃ Solar Cells with Matched Energy Levels Using Sb₂Se₃ as Hole Transport Layers