DOI: 10.32657/10356/13519
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Fabrication & characterization of high aspect ratio fine pitch deep reactive ion etched through-wafer electroplated copper interconnects

Abstract: , for providing their full support. • To my childhood friends Waseem Ahmed, Manish Tiwari, Alok Yadav, Goverdhan Dobhal, my brother Sandeep Dixit and sister Shalini Dixit and many others for their friendly support and advice. Finally my special gratitude is towards my parents and family, for their love, encouragement and support throughout my research duration. Without my parents, I would not have learnt the meaning of working hard. By creating the opportunities for me to have a good education, they have provi… Show more

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“…Based on a standard set of etching parameters with an etch rate of around 2.4µm/min in a STS-ICP etch system [187], as listed in Table 5.6, the corresponding ion density can be computed to be 150×10 10 cm -3 [188]. The substrate temperature is 283K.…”
Section: -14mentioning
confidence: 99%
“…Based on a standard set of etching parameters with an etch rate of around 2.4µm/min in a STS-ICP etch system [187], as listed in Table 5.6, the corresponding ion density can be computed to be 150×10 10 cm -3 [188]. The substrate temperature is 283K.…”
Section: -14mentioning
confidence: 99%