Fabrication and analysis of zirconium thin films on silicon (Si) by pulsed laser deposition

Abstract

Using pulsed laser deposition (PLD), Zr films were deposited on silicon with laser wavelengths of 1064 nm and 532 nm, at substrate temperatures of 25 °C, 300 °C, and 500 °C, and fluences of 0.25, 0.5, and 1.0 J/cm². The 1064 nm wavelength yielded smoother films, with surface roughness growing at higher fluences. The 300 °C temperature was ideal for crystal quality. Analyses through XRD, SEM, and AFM showed unique morphologies due to laser variables. Computations using a thin film growth model matched the empirical data, underscoring the factors critical to Zr film deposition and guiding PLD optimization for superior film quality.