Fabrication and analysis of ZnO thin film bulk acoustic resonators

Lin, Yi‐Cheng; Hong, Chan-Hwa; Chuang, Hao-Chun

doi:10.1016/j.apsusc.2007.11.059

Cited by 20 publications

(8 citation statements)

References 10 publications

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“…A variety of piezoelectric materials such as zinc oxide (ZnO), lead zirconate titanate (PZT), aluminium nitride (AlN), gallium arsenide (GaAs) and polyvinylidene fluoride (PVDF) have been used in FBARs (Bjurstrom et al 2006;DeMiguel-Ramos et al 2017;DeMiguel-Ramos et al 2014;Kim et al 2003;Lin et al 2008c;Mai et al 2004;Qiu et al 2011;Sapsford and Ligler 2004). Each of them has strengths and weaknesses.…”

Section: Piezoelectric Films Employed In Fbarsmentioning

confidence: 99%

Film bulk acoustic resonators (FBARs) as biosensors: A review

Zhang

Luo

Flewitt

et al. 2018

Biosensors and Bioelectronics

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Biosensors play important roles in different applications such as medical diagnostics, environmental monitoring, food safety, and the study of biomolecular interactions. Highly sensitive, label-free and disposable biosensors are particularly desired for many clinical applications. In the past decade, film bulk acoustic resonators (FBARs) have been developed as biosensors because of their high resonant frequency and small base mass (hence greater sensitivity), lower cost, label-free capability and small size. This paper reviews the piezoelectric materials used for FBARs, the optimisation of device structures, and their applications as biosensors in a wide range of biological applications such as the detection of antigens, DNAs and small biomolecules. Their integration with microfluidic devices and high-throughput detection are also discussed.

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Section: Piezoelectric Films Employed In Fbarsmentioning

confidence: 99%

Film bulk acoustic resonators (FBARs) as biosensors: A review

Zhang

Luo

Flewitt

et al. 2018

Biosensors and Bioelectronics

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“…According to the literature, the reactive sputtering technique has received a great interest because of its advantages for film growth, such as easy control for the preferred crystalline orientation, epitaxial growth at relatively low temperature, good interfacial adhesion to the substrate and the high packing density of the grown film. These properties are mainly caused by the kinetic energy of the clusters given by electric field (Molarius et al, 2003;Lin et al, 2008;Kim et al, 1997). This energy enhances the surface migration effect and surface bonding state.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of ZnO thin films deposed by RF magnetron

Ondo-Ndong¹,

Moussambi²,

Gnanga³

et al. 2015

Int. J. Phys. Sci.

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We have grown ZnO thin films on glass substrate by RF magnetron sputtering using metallic zinc target. The influences of some parameters on thin film optical properties were assessed. They exhibited extremely high resistivity of 10 12 Ω.cm, an energy gap of 3.3 eV at room temperature. It was found that a RF power of 50 W, a target to substrate distance of 70 mm, very low gas pressures of 3.35 x 10-3 Torr of argon and oxygen mixed gas atmosphere gave ZnO thin films with a good homogeneity and a high crystallinity. All the films are transparent in the visible region (400 to 800 nm) with average transmittance above 80%. The optical transmittance and refractive index, calculated from the spectra of optical absorbance, show a significant dependence on the growth parameters. As for the sample grown at 100°C, the average transmittance is about 80% in the visible wavelength range and the refractive index is estimated to be 1.97.

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“…6 Experimental Section FBAR devices were fabricated on 4" silicon wafers using a 4-mask process. 7 Vias were formed through the ZnO for electrical connection to the bottom electrodes. The device working areas ranged from 50µm x 50µm to 200µm x 200µm.…”

Section: Introductionmentioning

confidence: 99%

Thin Film Bulk Acoustic Wave Resonators for Continuous Monitoring in the Physical, Chemical and Biological Realms

Ashley

Luo

Kirby³

et al. 2009

MRS Proc.

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A transducer that can act as a highly sensitive and reliable universal sensor capable of detecting and continuously monitoring changes in the physical, chemical and biological domains is a potentially useful scientific tool. The Thin Film Bulk Acoustic Wave Resonator (FBAR) is a microwave device that is becoming increasingly recognised as a universal transduction platform with the added advantage of potential integration into CMOS architecture and array-like formats. This work shows preliminary results on FBAR where a continuous monitoring arrangement demonstrated the capability of FBAR to respond to changes in physical parameters such as temperature and light levels, the work goes on further to show the ability of FBAR to respond to changes in humidity in a gas flow and can have sensitivity increased with the addition of hygroscopic polymers on its surface and finally how FBAR can be adapted to act as a biosensor in the form of an immunosensor with sensitivity some orders of magnitude greater than traditional lower frequency bulk acoustic wave platforms.

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Fabrication and analysis of ZnO thin film bulk acoustic resonators

Cited by 20 publications

References 10 publications

Film bulk acoustic resonators (FBARs) as biosensors: A review

Film bulk acoustic resonators (FBARs) as biosensors: A review

Optical properties of ZnO thin films deposed by RF magnetron

Thin Film Bulk Acoustic Wave Resonators for Continuous Monitoring in the Physical, Chemical and Biological Realms

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