2016
DOI: 10.1117/12.2214054
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Fabrication and bandgap engineering of doped ZnO microspheres by simple laser ablation in air

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“…Cesium lead halide CsPbX 3 (X = Cl, Br, I) microspheres (MSs) were grown by a simple dual-source chemical vapor deposition method using CsX and PbX 2 powders as source material and bare silicon wafer as a substrate in a horizontal tube furnace. Similar to the growth of other semiconductor microspheres, the formation of the spherical shape is mainly due to the surface tension forces at high temperature. Figure a shows a typical scanning electron microscopy (SEM) image of synthesized samples. It can be seen that the as-grown CsPbI 3 MSs dispersed on a piece of silicon wafer with diameters ranging from 0.2 to 1.0 μm, placing them in an ideal size regime for single-mode lasing as confirmed later.…”
Section: Resultsmentioning
confidence: 99%
“…Cesium lead halide CsPbX 3 (X = Cl, Br, I) microspheres (MSs) were grown by a simple dual-source chemical vapor deposition method using CsX and PbX 2 powders as source material and bare silicon wafer as a substrate in a horizontal tube furnace. Similar to the growth of other semiconductor microspheres, the formation of the spherical shape is mainly due to the surface tension forces at high temperature. Figure a shows a typical scanning electron microscopy (SEM) image of synthesized samples. It can be seen that the as-grown CsPbI 3 MSs dispersed on a piece of silicon wafer with diameters ranging from 0.2 to 1.0 μm, placing them in an ideal size regime for single-mode lasing as confirmed later.…”
Section: Resultsmentioning
confidence: 99%