Fabrication and characterisation of a double-clamped beam structure as a control gate for a high-speed non-volatile memory device

García-Ramírez, Mario Alberto; Ghiass, Mohammad Adel; Moktadir, Zakaria; Tsuchiya, Yoshishige; Mizuta, Hiroshi

doi:10.1016/j.mee.2013.09.002

Cited by 10 publications

(1 citation statement)

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“…A few of the nanodevices already fabricated are based on simple structures such as single/double clamp beams, membranes and pillars [20]. Furthermore, one of the main drawbacks from MOS technology, scaling-down feature, has been successfully overcome as exposed elsewhere [21,22].…”

Section: Mems/nemsmentioning

confidence: 99%

MOS Meets NEMS: The Born of Hybrid Devices

García-Ramírez¹,

Bello-Jiménez²,

Macías-Rodríguez³

et al. 2018

Complementary Metal Oxide Semiconductor

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Nowadays, the semiconductor industry is reaching an impasse due to the scalingdown process according to Moore's Law, initiated back in 1960s, for the Metal-Oxide-Technology in use. To overcome such issue, the semiconductor industry started to foresee novel materials that allow the development of nanodevices with a broad variety of characteristics such as high switching speed, low power consumption, robust, among others; that can overcome the inherent issues for Silicon. A few "exotic materials" appear such as Graphene, MoS 2 , BN-h, among others. However, the time for the novel technology to be mature is a few decades in the future. To allow the "exotic materials" to mature, the semiconductor industry requires of novel nano-structures that can overcome a few of the issues that Silicon-based technology is facing today. A key alternative is based on hybrid structures. Hybrid structures encompass two dissimilar technologies nanoelectromechanical systems with the well known Metal-Oxide-Technology. The hybrid nano-structure provides a broad variety of options to be used in such as transistors, memories and sensors. These hybrid devices can give enough time for the technology based on "exotic materials" to be reliable as Silicon based is.

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Section: Mems/nemsmentioning

confidence: 99%