Fabrication and characterisation of NiO:Na/ZnO pn junction by magnetron sputtering technique

Abstract

Transparent all oxide pn junction film diode consisting of p-type NiO:Na and n-type ZnO was fabricated by magnetron sputtering method on Si substrate. These films were characterised by diffraction (XRD), atomic force microscopy (AFM) and UV-visible spectroscopy. XRD results show that NiO:Na film had a preferred orientation along the (111) direction while ZnO film was highly oriented along the (002) direction. The optical transmittance of NiO:Na and ZnO films were 60 and 80% respectively. I-V characteristic of NiO:Na/ZnO junction showed rectification. The junction parameters such as ideality factor, barrier height and series resistance were determined using conventional forward bias I-V characteristics and the Cheung method.

Metal oxide heterojunctions using a printable nickel oxide ink

“… 57 NiO–ZnO systems fabricated through radio-frequency magnetron sputtering have been shown to have slightly higher η values. 62 Ideality factors greater than 2 in pn heterojunctions have previously been attributed to non-linearity in the current–voltage behaviour of the metal–semiconductor junctions. 63 However, both the Al–AZO and the Al–NiO junctions have been shown to be ohmic.…”