Fabrication and characterisation of SiGe based in-plane-gate transistors

Koster, T.M.; Stein, J.; Hadam, B.; Gondermann, J.; Spangenberg, Bernd; Roskos, Hartmut G.; Kurz, H.; Holzmann, Markus; Riedinger, M.; Abstreiter, G.

doi:10.1016/s0167-9317(96)00132-3

Cited by 3 publications

(3 citation statements)

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“…The ability to tailor the band offset by strain engineering [1][2][3] and the recent progress in electron [4][5][6] and hole mobilities [1,6,7] enable us to fabricate high-speed devices that are superior to conventional Si based devices [8][9][10][11][12][13][14][15]. Moreover, low-temperature electron mobilities in excess of 10 5 cm 2 V −1 s −1 [16] offer the opportunity for realizing novel quantum effect structures and devices [17][18][19][20][21][22][23][24][25][26][27]. The fabrication procedure of these devices usually comprises local etching which forms a gate recess [28][29][30] or the lateral geometry of the nanostructure [17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, low-temperature electron mobilities in excess of 10 5 cm 2 V −1 s −1 [16] offer the opportunity for realizing novel quantum effect structures and devices [17][18][19][20][21][22][23][24][25][26][27]. The fabrication procedure of these devices usually comprises local etching which forms a gate recess [28][29][30] or the lateral geometry of the nanostructure [17][18][19][20][21][22][23][24][25]. According to established Si technology this process is performed by dry etching [17][18][19][20][21][22][23][24][25][28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

“…The fabrication procedure of these devices usually comprises local etching which forms a gate recess [28][29][30] or the lateral geometry of the nanostructure [17][18][19][20][21][22][23][24][25]. According to established Si technology this process is performed by dry etching [17][18][19][20][21][22][23][24][25][28][29][30][31][32]. Another important processing step is selective etching of layers, which is preferably done by wetchemical etching because of its much higher selectivity [30,33,34].…”

Section: Introductionmentioning

confidence: 99%

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Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching

Wieser

Iamundo

Kunze

et al. 2000

Semicond. Sci. Technol.

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We present a low-damage fabrication technique for lateral sub-100 nm patterning of Si (13.5 nm)/Si 0.76 Ge 0.24 (74 nm)/Si(001) heterostructures, which is based on successive selective wet-chemical etching. An oxide layer of 1-2 nm thickness on the Si top layer, which was formed well below the growth temperature of the heterostructure, was used as a sacrificial layer for transferring the resist pattern. Electron-beam lithography was done at 15 kV with a scanning electron microscope equipped with a field-emitter source. Transfer of the resist pattern is done by selective wet-chemical etching of the (i) oxide, (ii) Si and (iii) SiGe layers. The selectivity of the anisotropic Si etchant (25% w/w aqueous solution of tetramethyl ammonium hydroxide (TMAH) at 70 • C) is 20 : 1 for SiGe and better than 4200 : 1 for SiO 2 . The etch rate and selectivity of the SiGe etchant (buffered hydrofluoric acid, hydrogen peroxide and acetic acid) both depend on the waiting time between mixing and use.Due to the high anisotropy of TMAH the minimum width of grooves etched into the Si layer along the [110] direction of about 30 nm is mainly determined by the dimension of the oxide mask. Further transfer into the SiGe layer results in an undercut of the Si edge of about 70% of the etch depth, if the depth is less than the SiGe layer thickness. The profile of the SiGe grooves reveals a weak etching anisotropy. This patterning technique was applied to fabricate a geometric constriction in the epitaxial layers realized as a broken groove with the gap ranging from 15 to 300 nm width. Sufficiently long etching of the SiGe leads to complete underetching of the Si layer in the gap. The resulting suspended Si bridge is mechanically stable for 20 nm width and up to 360 nm length.

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