Fabrication and Characteristics of High Quality AlGaAs Film Grown on Al2O3 Substrate

Abstract

In this work, the characteristics of AlGaAs film grown on transparent Al 2 O 3 substrate are investigated. AlGaAs films having various Al compositions were fabricated on the GaAs buffer layer of an Al 2 O 3 substrate using metal organic chemical vapor deposition. It was found that the crystal quality and surface roughness of the AlGaAs film was gradually improved by increasing the Al composition. The relatively improved surface and crystallizations were observed at AlGaAs film having an Al composition of 80%. A marked decrease in the d-spacing between the AlGaAs plane and Al 2 O 3 substrate was clearly observed under the same condition. From these results, the high-quality AlGaAs film on the Al 2 O 3 substrate was attributed to an increase in the substitutional effect of Al for Ga caused by increasing the Al composition.