Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1053 nm

Abstract

A high speed 1053 nm superluminescent diode (SLD) with a ridge-waveguide structure has been fabricated for the first time to the best of our knowledge. InGaAs/GaAs quantum well epitaxial structure, the etched depth of the insulation channel and the area of p-side electrode were optimized to enhance the modulation bandwidth of the SLD. Bend-waveguide unpumped absorbing region structure and facet coating methods have been adopted to suppress the lasing oscillation. As a result, a −3 dB cutoff frequency of 1.7 GHz is obtained at a dc bias current of 100 mA and 25 • C heat-sink temperature, corresponding to 2.5 mW output power from single-mode fiber with spectral modulation of less than 0.15 dB and spectral width of 24 nm. The SLD module shows a good reliability.

Experimental Detection on Thickness Fluctuation of InxGa1-xAs-Based Indium-Rich Cluster Structure

“…In order to generate enough strain accumulation and IRC effect [13], [15], [16], the original active layer is In 0.17 Ga 0.83 As materials with a thickness of 10 nm here. The thinner InGaAs layer and a lower x-value in In x Ga 1-x As is not enough to obtain IRC effect because of the lower strain accumulation and lattice mismatching [17]. The In 0.17 Ga 0.83 As material is sandwiched by 2-nm-thick GaAs compensation layers.…”

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

“…The high-mobility of charge carriers in InGaAs over conventional Si allows the high-frequency operations at low voltages that reduces the 'power-constrained scaling' problem in high-density transistor integrations [6]. Additionally, the InGaAs material system is preferred for many photonic devices because of their direct energy bandgap in a wide composition range with high quantum efficiency that enables them to emit and detect photons efficiently [9,10]. As a result, it emerged as a promising material for the on-chip optical device integration for quantum communication [11].…”

Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure

“…The active layer consists of In 0.17 Ga 0.83 As materials with a thickness of 10 nm here to obtain necessary indium-rich islands on the surface of the In 0.17 Ga 0.83 As layer in the material growth process [13][14][15][16] . If the thickness of the InGaAs layer is thin and the indium content in InGaAs is low, there will not be any apparent indium-rich islands observed due to short migration length for indium atoms and low lattice mismatching [17,18] . The well is sandwiched by 2-nm-thick GaAs compensation layers.…”