Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials 2007
DOI: 10.7567/ssdm.2007.p-8-14
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Fabrication and characteristics of the low resistivity p-type ZnO thin films by nitrogen ion implantation

Shau‐Wei Tsai1,
Yangming Lu2,
Min-Hsiung Hon3
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