Fabrication and Characteristics of the 2D Magnetic Sensor Based on the MOSFET Hall Device

Abstract

This paper reports the two dimensional (2D) magnetic sensor, which is comprised of twoMOSFET Hall devices with similar characteristics. The sensor is based on the MOSFET Hall deviceprinciple and is fabricated on <100> orientation silicon substrate by adopting complementary metaloxide semiconductor (CMOS) technology and packaging technology. The experiment results indicatethat when VDS =5.0 V, the magnetic sensitivities of the 2D magnetic sensor can reach Sx=34.0 mV/Tand Sy=33.6 mV/T in the x and y directions, respectively, it is necessary to realize the measurementof 2D magnetic field.