Fabrication and Characterization of 3C‐SiC‐Based MOSFETs

Schöner, Adolf; Krieger, Michael; Pensl, Gerhard; Abe, Masayuki; Nagasawa, Hiroyuki

doi:10.1002/cvde.200606467

Cited by 110 publications

(100 citation statements)

References 21 publications

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“…It's worth mentioning that different SiC polytypes present distinctive physical properties. 3C-SiC, for example, has higher electron mobility, better saturated electron drift velocity and reduced interface trap density with oxide [14] compared to the other polytypes. Diamond has superior properties over other indirect band gap semiconductor materials shown in table 1.…”

Section: Physical Propertiesmentioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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Section: Physical Propertiesmentioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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“…[136]. Furthermore, 3C-SiC is expected to give a better SiO 2 /SiC interface in terms of inversion channel mobility [137,138]. In fact, since the bottom of the conduction band in 3C-SiC is about 0.9 eV lower than in 4H-SiC, the near-interface traps located close to the bottom of the conduction band in 4H-SiC, should be inactive in 3C-SiC, leading to higher inversion channel mobility [113,114].…”

Section: Interfaces Considering Different Sic Polytypesmentioning

confidence: 99%

Nanoscale transport properties at silicon carbide interfaces

Roccaforte¹,

Giannazzo²,

Raineri³

2010

J. Phys. D: Appl. Phys.

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Abstract. Wide band gap semiconductors promise devices with performances not achievable using silicon technology. Among them, Silicon Carbide (SiC) is considered the top-notch material for a new generation of power electronic devices, ensuring the improved energy efficiency requested in the modern society. In spite of the significant progresses achieved in the last decade in the material quality, there are still several scientific open issues related to the basic transport properties at SiC interfaces and ion-doped regions that can affect the devices performances, keeping them still far from their theoretical limits. Hence, significant efforts in fundamental research at nanoscale have become mandatory to better understand the carrier transport phenomena, both at surfaces and interfaces. In this paper, the most recent experiences on nanoscale transport properties will be addressed, reviewing the relevant key points for the basic devices building blocks. The selected topics include the major concerns related to the electronic transport in metal/SiC interfaces, to the carrier concentration and mobility in ion-doped regions, and to channel mobility in metal/oxide/SiC systems. Some aspects related to interfaces between different SiC polytypes are also presented. All these issues will be discussed considering the current status and the drawbacks of SiC devices.

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“…[1][2][3][4] In order to accelerate the 3C-SiC application in electronics high quality thick 3C-SiC layers or substrates are needed. They could be used for homoepitaxial growth, e.g., by chemical vapor deposition (CVD) which allows reproducible growth of device quality 3C-SiC layers.…”

Section: Introductionmentioning

confidence: 99%

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Jokubavičius

Yazdi

Liljedahl

et al. 2015

Crystal Growth & Design

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We investigated the formation of structural defects in thick (~ 1mm) 3C-SiC layers grown on off-oriented 4H-SiC substrates via lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the twostep growth process combined with geometrically controlled lateral enlargement mechanism allows formation of single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution x-ray diffraction and low temperature photoluminescence measurements. ABSTRACTWe investigated the formation of structural defects in thick (~ 1mm) 3C-SiC layers grown on off-oriented 4H-SiC substrates via lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we 3 demonstrated that the two-step growth process combined with geometrically controlled lateral enlargement mechanism allows formation of single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution x-ray diffraction and low temperature photoluminescence measurements.

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Fabrication and Characterization of 3C‐SiC‐Based MOSFETs

Cited by 110 publications

References 21 publications

CVD solutions for new directions in SiC and GaN epitaxy

CVD solutions for new directions in SiC and GaN epitaxy

Nanoscale transport properties at silicon carbide interfaces

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

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