Current injection into a photonic crystal cavity is an important task in material science and technology. A photonic crystal built in a twodimensional semiconductor slab is a promising candidate for novel optical devices since it has excellent light confinement capability. However, the presence of insulating cladding layers to reduce light loss makes current injection difficult, and hence practical active devices have not yet been developed. In this study, we numerically investigate the effect of selectively oxidized AlAs layers designed so as to make carrier injection possible. Results of finite-difference time-domain (FDTD) calculations show that both carrier injection with sufficiently low resistivity and light confinement are feasible for the structure with the oxidized AlAs/AlO x cladding layers.