Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode

Wang, Hong; Zhou, Quanbin; Liang, Siwei; Wen, Rulian

doi:10.3390/nano9010066

Cited by 13 publications

(4 citation statements)

References 24 publications

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“…In a previous study, we demonstrated that the ITO/Ga 2 O 3 /Ag/Ga 2 O 3 multilayer has advantages in conductivity and transmittance for UV LEDs compared to ITO [27]. The ITO/Ga 2 O 3 /Ag/Ga 2 O 3 multilayer consists of an ITO contact layer, a Ga 2 O 3 layer, an Ag metal layer, and another Ga 2 O 3 layer, which are deposited in sequence.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Liang

Zhou

et al. 2019

Nanomaterials

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We fabricated an indium tin oxide (ITO)/Ga2O3/Ag/Ga2O3 multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing temperature of the ITO contact layer and the whole ITO/Ga2O3/Ag/Ga2O3 multilayer, and the thickness of the ITO contact layer and Ag metal layer. After optimization, the sheet resistance and transmittance of the ITO/Ga2O3/Ag/Ga2O3 multilayer was 3.43 Ω/sq and 86.4% at 335 nm, respectively. The ITO/Ga2O3/Ag/Ga2O3 multilayer also exhibited a good ohmic contact characteristic with a specific contact resistance of 1.45×10−3 Ω·cm2. These results show that the proposed ITO/Ga2O3/Ag/Ga2O3 multilayer is a promising alternative as a p-type electrode for UV LEDs.

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Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Liang

Zhou

et al. 2019

Nanomaterials

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“…Ga 2 O 3 is a wide-bandgap semiconductor with ~4.9 eV; it is an optically transparent material and features poor conductivity [7]. Therefore, Ga 2 O 3 is the most commonly used component in electronic devices, such as ultraviolet (UV) photodetectors, power electronic devices, light-emitting diodes, and transparent conducting films [8,9,10,11]. However, Ga is a carrier suppressor, which reduces oxygen vacancy in control carrier concentrations in multicomponent oxide TFT devices.…”

Section: Introductionmentioning

confidence: 99%

Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga

Chen

Yang

et al. 2019

Materials

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In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In2O3 target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content. However, when the deposition power of the In2O3 target increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance, increased. The best performance was recorded at a threshold voltage of 1.1 V, on-off current ratio of 4.5 × 106, and subthreshold swing of 3.82 V/dec in sample B. Meanwhile, the optical properties of sample B included a responsivity of 0.16 A/W and excellent ultraviolet-to-visible rejection ratio of 8 × 104. IGO TFTs may act as photodetectors according to the results obtained for optical properties.

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“…Understanding the effect of oxygen-doped sputtered AlN NL on the subsequent AlN film is important to the realization of high-efficiency DUV LEDs. On the other hand, the crystalline structure of AlN film is closely related with the thickness of sputtered AlN NL [30,31,32,33,34]. The characteristics of AlN film on sapphire substrate with different thicknesses of sputtered AlN NL is of significant interest for DUV LEDs.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Zhao

Lei

et al. 2019

Nanomaterials

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High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN NLs, including in situ low-temperature AlN (LT-AlN) NL, oxygen-undoped ex situ sputtered AlN NL, and oxygen-doped ex situ sputtered AlN NL, were prepared for epitaxial growth of AlN films on sapphire substrates. The influence of nanoscale AlN NL thickness on the optical transmittance, strain state, surface morphology, and threading dislocation (TD) density of the grown AlN film on sapphire substrate were carefully investigated. The average optical transmittance of AlN film on sapphire substrate with oxygen-doped sputtered AlN NL was higher than that of AlN films on sapphire substrates with LT-AlN NL and oxygen-undoped sputtered AlN NL in the 200–270 nm wavelength region. However, the AlN film on sapphire substrate with oxygen-undoped sputtered AlN NL had the lowest TD density among AlN films on sapphire substrates. The AlN film on sapphire substrate with the optimum thickness of sputtered AlN NL showed weak tensile stress, a crack-free surface, and low TD density. Furthermore, a 270-nm AlGaN-based DUV LED was grown on the high-quality and crack-free AlN film. We believe that our results offer a promising and practical route for obtaining high-quality and crack-free AlN film for DUV LED.

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Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode

Cited by 13 publications

References 24 publications

Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

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