2021
DOI: 10.1088/1674-4926/42/12/122802
|View full text |Cite
|
Sign up to set email alerts
|

Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz

Abstract: State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized. Hall mobility of 2291.1 cm2/(V·s) and two-dimensional electron gas density of 9.954 × 1012 cm–2 were achieved at 300 K. The HEMT devices with a 0.45-μm gate length exhibited maximum drain current density as high as 1039.6 mA/mm and peak extrinsic transconductance of 229.7 mS/mm. The f … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
4

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 33 publications
0
3
0
Order By: Relevance
“…The f T and f max values measured on the device were 30.89 GHz and 38.71 GHz. Uncooled devices showed high linear power gain of 17.04 dB and high power-added-efficiency of 50.56% at 8 GHz with drain bias (−3.5,28) V. In addition, when the drain bias was (−3.5,40) V, the saturation output power density was 6.21 W/mm, and the poweradded efficiency was 39.56% and the power gain reached to 11.91 dB 28 .…”
Section: Epitaxial Growth and Device Resultsmentioning
confidence: 97%
See 1 more Smart Citation
“…The f T and f max values measured on the device were 30.89 GHz and 38.71 GHz. Uncooled devices showed high linear power gain of 17.04 dB and high power-added-efficiency of 50.56% at 8 GHz with drain bias (−3.5,28) V. In addition, when the drain bias was (−3.5,40) V, the saturation output power density was 6.21 W/mm, and the poweradded efficiency was 39.56% and the power gain reached to 11.91 dB 28 .…”
Section: Epitaxial Growth and Device Resultsmentioning
confidence: 97%
“…Therefore, AlGaN/GaN HEMTs have great application prospects in high-power microwave devices and high-frequency devices 26 , 27 . AlGaN/GaN with high electron mobility was grown by metal-organic chemical vapor deposition (MOCVD) method on 4-inch semi-insulating 4H-SiC substrates 28 . X-band microwave power high electron mobility transistors were made.…”
Section: Introductionmentioning
confidence: 99%
“…2(d), the gate leakage current of the fabricated HEMTs is depicted. The increasing gate leakage under V GS > +3 V limits the application of a more positive bias [7] . It is worth noticing that the gate leakage decreases as the drain voltage increases.…”
Section: (B)mentioning
confidence: 99%