Fabrication and characterization of Ba1−xSr1−xTiO3 tunable thin film capacitors

Outzourhit, A.; Trefny, J. U.; Kito, Tomoko; Yarar, B.; Naziripour, A.; Hermann, A. M.

doi:10.1016/0040-6090(94)06451-2

Cited by 55 publications

(22 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In general, the tunability is roughly proportional to the dielectric constant. A material with higher dielectric constant possesses larger tunability [15]. The dielectric constant and tunability showed a maximum of 414 and 36.8%, respectively, at a seed layer thicknesses of 20 nm.…”

Section: Resultsmentioning

confidence: 95%

Effect of seed layers on dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films

2007

View full text Add to dashboard Cite

The Barium zirconium titanate Ba(Zr 0.3 Ti 0.7 )O 3 thin films were prepared on Pt/Ti/SiO 2 /Si substrates with seed layers at the BZT/Pt interface by sol-gel process. Microstructure and structure of thin films were examined. Dielectric properties of thin films with various seed layers thicknesses were investigated as a function of frequency and direct current electric field. The tunability and dielectric constant of BZT thin films increased with increasing seed layer thickness from 0 to 20 nm, while it decreased with a further increase in thickness above 20 nm, meanwhile, the leakage current showed the similar tendency at applied electric field of 250 kV/cm. The optimized seed layer thickness for BZT thin films plays an important role in maintaining the high tunability and low leakage current, which are suitable for microwave device applications.

show abstract

Section: Resultsmentioning

confidence: 95%

Effect of seed layers on dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films

2007

View full text Add to dashboard Cite

show abstract

“…In general, tunability is roughly proportional to the dielectric constant. A material with higher dielectric constant possesses larger tunability [14].…”

Section: Resultsmentioning

confidence: 99%

Structure and dielectric properties of Ba(Sn0.2Ti0.8)O3 thin films grown on different substrates by a sol-gel process

2007

View full text Add to dashboard Cite

Ba(Sn 0.2 Ti 0.8 )O 3 (BTS) thin films were deposited on Pt/Ti/SiO 2 /Si and LaNiO 3 /Pt/Ti/SiO 2 /Si substrates by a sol-gel processing technique, respectively. The influences of substrates on the phase and microstructure of the thin films were examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. The results showed that the substrates strongly influenced the microstructure and the dielectric properties of the films. The properties of BTS thin films on LaNiO 3 /Pt/Ti/SiO 2 /Si substrates were superior to that of the films grown on Pt/Ti/SiO 2 /Si substrates.

show abstract

“…However, the thickness effect has been reported by several authors [17][18][19]. The thickness dependence of in-plane permittivity has rarely been reported although it is of importance for applications as well as for the differentiation between the various physical mechanisms that contribute to this effect.…”

Section: Tunable Thin Filmsmentioning

confidence: 95%