Fabrication and Characterization of Back-to-Back Schottky Diode in Ni/ZnO/Ag Nanojunction

Labar, Rini; Kundu, Tapas K.

doi:10.1007/s11664-021-09280-1

Cited by 4 publications

(2 citation statements)

References 30 publications

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“…The produced ZnO/Ni contacts are used as control samples; Ni fails to fulfill condition (1) and ZnO/Ni interfaces are known to produce Schottky diode characteristics. 36 An additional set of experiments are carried out by depositing Zn, Al, Ti and Bi top electrodes on a ZnO coated zinc substrate (see below). The results are intended to show that the previously obtained comparative CR results are independent of the different textures of the ZnO thin films presumably resulting from deposition on different metallic substrates.…”

Section: Methodsmentioning

confidence: 99%

Contact resistances between ZnO and Ti, Al, Zn, and Bi: correlation with the density of states at Fermi energies

Hossein-Babaei,

Alizadeh

2024

J. Mater. Chem. C

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Section: Methodsmentioning

confidence: 99%

Contact resistances between ZnO and Ti, Al, Zn, and Bi: correlation with the density of states at Fermi energies

Hossein-Babaei,

Alizadeh

2024

J. Mater. Chem. C

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“…and GaN, the MgZnO/ZnO layers were selectively etched after prepatterning using diluted HCl wet etching without damaging the GaN layer. Figure 2(b) displays the I−V curve of the MgZnO/ZnO/GaN heterojunction device with the rectifying diode characteristics for both forward and reverse bias, which are analogous to back-to-back Schottky or tunnel diodes [22,23]. In the case of a forward bias, a positive bias is applied to the contact on the MgZnO layer, whereas a negative bias is applied to the GaN side.…”

Section: Optical Propertiesmentioning

confidence: 99%

Electroluminescent MgZnO/ZnO Heterojunction Diode

Kim,

Kang

2023

Appl. Sci. Converg. Technol.

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We report the fabrication and characterization of a heterojunction diode with a MgZnO/ZnO structure grown on a GaN/Al 2 O 3 substrate. A radio frequency sputtering method was employed to achieve a high Mg composition in the MgZnO alloy layer, whereas the ZnO layer was epitaxially grown by metal-organic chemical vapor deposition. The MgZnO/ZnO-based heterojunction diode exhibited rectifying currentvoltage (I−V) characteristics under both forward and reverse bias. However, white electroluminescence (EL) emission was observed only under high forward bias. To understand these phenomena, we thoroughly investigated the I−V characteristics of the heterojunction diode, which revealed that the tunneling of holes through the MgZnO barrier is an important mechanism for EL emission. In particular, the Fowler-Nordheim (FN) tunneling of holes is mainly responsible for EL emission under high forward bias. An explanatory schematic of the band diagram based on the I−V characteristics suggests that the EL emission is primarily attributed to the injection of holes via FN tunneling through the MgZnO barrier. This study provides a potential application for optoelectronic devices using MgZnO/ZnO-based heterostructures as ZnO-based light emitters.

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TiO₂‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories

Zhang,

Jin,

Kim

et al. 2024

Physica Rapid Research Ltrs

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This study presents TiO2‐based Schottky diodes designed as bidirectional switches for bipolar resistive memories. The TiO2 films in these Schottky diodes are prepared through an anodization process. The reverse current of these diodes exhibits an exponential increase with rising reverse voltage, ultimately matching the forward current. When two diodes are connected back‐to‐back, they demonstrate superior current–voltage symmetry and provide a wider off‐state voltage range compared to a single diode, reaching up to 3.65 V. The adjustable off‐state voltage range (0.40–3.65 V) of the switch, whether utilizing two diodes or a single diode, correlates well with the TiO2 layer thickness and oxygen partial pressure during Pt electrode sputtering. These diodes possess bidirectional switching characteristics and can serve as effective switch elements to address the sneak‐path issue in bipolar resistive memories.

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Fabrication and Characterization of Back-to-Back Schottky Diode in Ni/ZnO/Ag Nanojunction

Cited by 4 publications

References 30 publications

Contact resistances between ZnO and Ti, Al, Zn, and Bi: correlation with the density of states at Fermi energies

Contact resistances between ZnO and Ti, Al, Zn, and Bi: correlation with the density of states at Fermi energies

Electroluminescent MgZnO/ZnO Heterojunction Diode

TiO₂‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories

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Fabrication and Characterization of Back-to-Back Schottky Diode in Ni/ZnO/Ag Nanojunction

Cited by 4 publications

References 30 publications

Contact resistances between ZnO and Ti, Al, Zn, and Bi: correlation with the density of states at Fermi energies

Contact resistances between ZnO and Ti, Al, Zn, and Bi: correlation with the density of states at Fermi energies

Electroluminescent MgZnO/ZnO Heterojunction Diode

TiO2‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories

Contact Info

Product

Resources

About

TiO₂‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories