Fabrication and Characterization of BaTiO₃/Pt/C/Pt/Ti/SiO₂ Structures

Abstract

We deposited BaTiO 3 (BTO) films by the rf magnetron sputtering method on Pt/C/Pt/Ti/SiO 2 substrates with carbon (C) film. Annealing the Pt/C/Pt/Ti/SiO 2 substrates in a mixture gas of argon and oxygen caused the Pt films on the C films to become semi-freestanding. The BTO films deposited on the Pt/C/Pt/Ti/SiO 2 substrates had better polarization-electric field (P-E) characteristics than those deposited on the Pt/Ti/SiO 2 substrates. Using substrates including C films is an effective way to obtain BTO films with good P-E characteristics.