Fabrication and Characterization of d33 Mode (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) Energy Harvester

Abstract

Key words: d 33 mode, energy harvester, bonding and grinding, MEMSIn this manuscript, a d 33 mode piezoelectric micro-electromechanical systems (MEMS) energy harvester integrated with silicon proof mass, which is made of composite cantilever beams from a silicon layer and a single crystal PMN-PT thick film, is proposed. The silicon mass is fabricated by the deep-reactive ion etching (DRIE) process to reduce the resonant frequency for a matching ambient source. A PMN-PT film of 15 µm thickness is realized by the hybrid process of wafer bonding and grinding. The experimental results show that this fabricated prototype can generate a maximum output voltage of 1.18 V P-P and corresponding power of 0.139 µW at the resonant frequency of 200 Hz and vibration acceleration of 2 g.