2010
DOI: 10.1016/j.jpcs.2009.12.034
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Fabrication and characterization of fullerene/porphyrin bulk heterojunction solar cells

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Cited by 61 publications
(34 citation statements)
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“…Amorphous silicon doped with boron or phosphorus would function as p-type or n-type semiconductor, respectively [10]. Energy levels would be different between PDPS with B and PDPS with P, and previously reported values were used for the energy levels [11,12]. The incident of light is from ITO or FTO side.…”
Section: Resultsmentioning
confidence: 99%
“…Amorphous silicon doped with boron or phosphorus would function as p-type or n-type semiconductor, respectively [10]. Energy levels would be different between PDPS with B and PDPS with P, and previously reported values were used for the energy levels [11,12]. The incident of light is from ITO or FTO side.…”
Section: Resultsmentioning
confidence: 99%
“…Energy levels of GaPc dimer at HOMO and LUMO were calculated to be -5.165 eV and -3.051 eV, as listed in [12]. The value of 0.3 V is an empirical factor and this is enough for efficient charge separation [13,14]. The model of photovoltaic mechanism would be described by this equation, and the control of the energy levels is important for improving conversion efficiency.…”
Section: Resultsmentioning
confidence: 99%
“…The effective formation and separation of excitons in the diamond:C 60 system is due to the nanocomposite structure. Journal of the Ceramic Society of Japan 118 [11] 1006-1008 2010…”
Section: Methodsmentioning
confidence: 99%