Fabrication and characterization of heteroepitaxial <i>p-n</i> junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO

Ohta, Hiromichi; Mizoguchi, Hiroshi; Hirano, Masahiro; Narushima, Satoru; Kamiya, Toshio; Hosono, Hideo

doi:10.1063/1.1544436

Cited by 120 publications

(55 citation statements)

References 10 publications

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“…A photoresponsivity as high as ~0.3 AW -1 was achieved at 26 V reverse bias under irradiation by 360 nm light that is slightly larger than the ZnO wavelength. Ohta et al [125] also reported on transparent p-n heterojunctions composed of p-ZnRh 2 O 4 and n-ZnO thin layers grown by reactive solid-phase epitaxy. The p-n heterojunctions had an abrupt interface and exhibited distinct rectifying I-V characteristics with a threshold voltage of ~2 V that is in agreement with the band-gap energy of ZnRh 2 O 4 .…”

Section: Photodiodesmentioning

confidence: 95%

Preparation and properties of ZnO and devices

Izyumskaya

Avrutin

Özgür

et al. 2007

Physica Status Solidi (b)

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ZnO has gained interest in part because of its large exciton binding energy (60 meV), good for lasing with low threshold. The renewed interest in ZnO is fuelled by availability of high quality substrates, reports of p-type conductivity, and ferromagnetic behavior when doped with transitions metals. The field is also fuelled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. Despite great strides there are still many challenges, the chief among them is the attainment of reproducibly low resistivity p-type ZnO. While ZnO already has many industrial applications owing to its piezoelectric properties and bandgap in the near UV, its applications to optoelectronic devices utilizing electrical injection has not yet been put to practice mainly due to the lack of p-type epitaxial layers. This review provides a discussion of some of the growth issues of ZnObased epitaxial and heteroepitaxial layers and their use in a variety of devices.

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Section: Photodiodesmentioning

confidence: 95%

Preparation and properties of ZnO and devices

Izyumskaya

Avrutin

Özgür

et al. 2007

Physica Status Solidi (b)

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“…As far as all-TCO junction based on spinel structure is concerned, Ohta et al [166] first reported p-n heterojunction of the form p-ZnRh 2 O 4 / n-ZnO on indium tin oxide (ITO)-coated YSZ (111) substrate. The n-and p-layers were deposited by PLD technique.…”

Section: Transparent Junctions Based On Spinel and Delafossite Oxidesmentioning

confidence: 99%

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Banerjee¹,

Chattopadhyay

2008

Reactive Sputter Deposition

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Reactive sputtering is one of the most widely used techniques for preparing compound thin films (such as oxides, nitrides, carbides, etc.) by sputtering metal targets in an active gas atmosphere (Ar + O 2 /N 2 /CH 4 , etc.) [1][2][3][4]. In this chapter, we have discussed, in details, the formation of spinel and delafossite materials of the form AB 2 O 4 and ABO 2 (A and B may be monovalent, divalent, trivalent, or tetravalent cations, depending on the crystal structure, described later) by reactive sputtering technique. Specially, wide bandgap, ptype semiconducting, and transparent oxide materials with delafossite and spinel structure, having interesting applications in "Transparent Electronics," have been discussed in details. In Sects. 12.2-12.5, a detailed review on the structural, optical, and electrical properties of these p-type transparent conducting oxides (p-TCOs), deposited by reactive sputtering technique, has been presented and the origin of p-type conductivity of these materials has been discussed with considerable attention. Most of the results presented in these sections are reported by various authors working on this field. In Sect. 12.6, synthesis and electro-optical characterization of one of the very important delafossite, p-type semiconducting, and wide-bandgap material, such as CuAlO 2 , produced by our group via reactive sputtering technique, have been discussed in details. Detailed discussions on spinel-and delafossitestructured material can be found in various literatures [5][6][7][8][9][10][11][12][13][14]. Also, detailed reviews on the p-TCO materials have been published by us and others [15][16][17], which cover the syntheses and properties of a range of p-TCO materials reported so far.

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“…Unlike Na x CoO 2 it is an insulator and, as far as we are aware, doping with mobile carriers to obtain metallic conductivity has not been reported, although p-type conduction has been observed. 16 Alloying the Zn A-site with monovalent ions, for example Li or Tl may introduce holes, but it is not known whether this can be done in a way that would lead to metallic properties. According to LDA band structure calculations and optical measurements, 17 ZnRh 2 O 4 has a narrow t 2g -derived valence band manifold, with a width similar to that of Na x CoO 2 and, also like Na x CoO 2 , it has a large crystal-field gap between the valence and conduction e g bands, which reflects strong Rh-O hybridization.…”

mentioning

confidence: 99%

Thermoelectric Properties of Na x CoO2 and Prospects for Other Oxide Thermoelectrics

Singh

Kasinathan

2007

Journal of Elec Materi

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We discuss the thermoelectric properties of Na x CoO 2 using the electronic structure, as determined in first principles calculations, and Boltzmann kinetic transport theory. The Fermi energy lies near the top of a manifold of Co t 2g bands. These t 2g bands are separated by a large gap from the higherlying e g states. Although the large crystal-field splitting implies substantial Co-O hybridization, the bands are narrow. Application of standard Boltzmann transport theory to such a narrow band structure yields high thermopowers in accord with experimental observations, even for high metallic carrier densities. The high thermopowers observed for Na x CoO 2 can therefore be explained by standard band theory and do not rely on low dimensionality or correlation effects specific to Co. We also present results for the cubic spinel structure ZnRh 2 O 4 . Like Na x CoO 2 , this compound has very narrow valence bands. We find that if it could be doped with mobile carriers, it would also have a high thermopower, comparable with that of Na x CoO 2 .

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Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO

Cited by 120 publications

References 10 publications

Preparation and properties of ZnO and devices

Preparation and properties of ZnO and devices

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Thermoelectric Properties of Na x CoO2 and Prospects for Other Oxide Thermoelectrics

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