Fabrication and characterization of high frequency SAW device with IDT/ZnO/AlN/Si configuration: role of AlN buffer

Jung, Jun-Phil; Lee, Jin-Bock; Kim, Jung-Sun; Park, Jin-Seok

doi:10.1016/j.tsf.2003.07.022

Cited by 34 publications

(18 citation statements)

References 11 publications

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“…There are also other substrates for fabricating ZnO based thin film high frequency SAW devices, such as diamond, diamond-like carbon films, SiC [74][75][76][77]. Other substrates suitable for the deposition of TM-doped ZnO films are Si [78,79], AlN/Si [80,81], SiO 2 /Si [82][83][84], and LiNbO 3 [85].…”

Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

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In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn 2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn 0.975 V 0.025 O of 170 pC/N, Zn 0.94 Cr 0.06 O of 120 pC/N, Zn 0.913 Mn 0.087 O of 86 pC/N and Zn 0.988 Fe 0.012 O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO.The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn 2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn 2+ substitutes for Zn 2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.

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Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

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“…C-axis-oriented AlN thin film shows a high acoustic velocity ([10 km/s), a wide energy band gap (6.2 eV), a high hardness ([20 GPa), a high thermal conductivity (3.9 W/cm K at RT), a high-temperature stability (melting point of [2,000°C), a high electrical resistivity and a low acoustic loss, and an integratability with complementary metal oxide semiconductor (CMOS) [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Effects of sputtering atmosphere on the properties of c-plane ScAlN thin films prepared on sapphire substrate

Zhang

Zhu

Zhou

et al. 2014

J Mater Sci: Mater Electron

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In this work, scandium aluminum nitride alloy (ScAlN) thin films were prepared on c-sapphire substrates by DC reactive magnetron sputtering with a scandium aluminum alloy (Sc 0.06 Al 0.94 ) target. The crystal orientation and surface morphology were detected by XRD and AFM, respectively. The electrical properties were analyzed by a standard ferroelectric test system and piezoelectric response force microscopy. The results show that the sputtering atmosphere, including N 2 /Ar flow ratio and sputtering pressure, appears to be important to influence the crystal quality and electrical properties of ScAlN films. With the N 2 /Ar flow ratio increasing from 3.1:7 to 3.6:7, the crystal orientation and surface morphology of ScAlN films firstly improves and then gets worse. Meanwhile, the electrical qualities of the films performs a similar variation. When the sputtering pressure increases from 0.3 to 0.7 Pa, the properties of the films change obviously too, and the best sputtering pressure is determined as 0.5 Pa. Finally, highly c-axis ScAlN films can be obtained with a N 2 /Ar flow ratio of 3.4:7 and a sputtering pressure of 0.5 Pa, and the FWHM value of the rocking curve, the RMS roughness, the resistivity, the dielectric constant e r and piezoelectric constant d 33 are 2.6°, 2.650 nm, 2.9 9 10 12 X/cm, 12.2 and 8.1 pC/N, respectively.

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“…The possibility of V SAW up to 10 000 m/s has been also reported in the case of AlN/diamond/Si and LiNbO 3 /diamond/Si structures [11], though, there have been just a few approaches to fabricate c-axis oriented films of these materials on diamond substrates [12,13]. However, although ZnO/diamond/Si is one of the most promising material components for gigahertzband SAW filters, there still exist several difficulties in employing diamond for SAW devices, such as complicated growth conditions for high-quality film, incompatibility with conventional semiconductor processes, and large surface roughness (typically, several hundred nanometers) hindering the propagation of surface waves [14,15].…”

Section: Introductionmentioning

confidence: 99%

Brillouin light scattering characterization of the surface acoustic wave velocity in the ZnO/ Si3N4 /Si(100) system

Céspedes

Riobóo

Vila

et al. 2006

Superlattices and Microstructures

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Fabrication and characterization of high frequency SAW device with IDT/ZnO/AlN/Si configuration: role of AlN buffer

Cited by 34 publications

References 11 publications

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Effects of sputtering atmosphere on the properties of c-plane ScAlN thin films prepared on sapphire substrate

Brillouin light scattering characterization of the surface acoustic wave velocity in the ZnO/ Si3N4 /Si(100) system

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