Fabrication and Characterization of High-Efficiency Green InGaN Light-Emitting Diodes With Metal-Doped ITO Layer

Wen, Rulian; Hu, Xiaolong; Zhou, Quanbin; Chen, Ditao; Wang, Hong

doi:10.1109/ted.2018.2860599

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…Thus, the lateral propagation length of the guided mode can be shortened, the propagation directions of the transmitted and reflected beams can be effectively controlled, and finally high light transmittance is guaranteed. 34,36…”

Section: Modelmentioning

confidence: 99%

“…Specifically, InN (

n\ = \ 2.9

), which has a higher refractive index than GaN (

n\ = \ 2.5

), is doped in the PhC array, which will intensify the contrast of refractive index between the PhC grating and the surrounding air. Thus, the lateral propagation length of the guided mode can be shortened, the propagation directions of the transmitted and reflected beams can be effectively controlled, and finally high light transmittance is guaranteed 34,36 …”

Section: Modeling and Simulationmentioning

confidence: 99%

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Enhancing light extraction efficiency of GaN LED by combining complex‐period photonic crystals with doping

Chen

Wang

2023

J Am Ceram Soc.

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The light extraction efficiency (LEE) of GaN‐based light‐emitting diodes (LEDs) was limited by intense total internal reflection and the photothermal effect. In order to solve this problem, a method to synergistically control the LEE of GaN‐based LEDs by combining the complex‐period photonic crystals (PhCs) with M (M = Al, In) material doping is proposed. The forbidden band width of two‐dimensional (2D) PhC array, three‐dimensional (3D) LED model, M doping, and electromagnetic field distribution are investigated respectively. By doping the M, the LED emission wavelength range is regulated to achieve the dual‐band emission. Furthermore, a triangular complex‐period photonic structure is introduced to establish stacked or etched PhCs models. By combining the plane wave expansion and finite difference time domain algorithm, the structural parameters of PhCs and M concentration dependent LEE are investigated, and the electromagnetic field distribution is explored also. The results show that the optimal LEEs can be achieved are 19.08% and 13.96% for blue light and ultraviolet, respectively, which are larger than that of traditional flat‐panel LED (4%). This work provides theoretical results and technical support for the design of LEDs with high luminous efficiency.

show abstract

Section: Modelmentioning

confidence: 99%

“…Specifically, InN (

n\ = \ 2.9

), which has a higher refractive index than GaN (

n\ = \ 2.5

Section: Modeling and Simulationmentioning

confidence: 99%

Enhancing light extraction efficiency of GaN LED by combining complex‐period photonic crystals with doping

Chen

Wang

2023

J Am Ceram Soc.

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“…Many different epitaxial layer designs as well as the different device configurations have been employed to increase LED LEE [3][4][5][6]. One of the most common InGaN/GaN LED device configurations is the conventional top emitting LEDs (TE LEDs) which include a variety of top current spreading layers, such as thin Ni/Au metallization, ITO, AZO and etc., and interdigitated metal contact based structures [7]. In the conventional TE LEDs, LEE is significantly decreased due to the absorption of the photons generated within the device by the metal top contacts and/or the bonding pads on the p-type GaN layer.…”

Section: Introductionmentioning

confidence: 99%

Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Genç

Шеремет

Elçi

et al. 2019

Superlattices and Microstructures

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This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Ω have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.

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High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and Al-doped indium tin oxide film

Xiao

Zhou

et al. 2019

Journal of Alloys and Compounds

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Fabrication and Characterization of High-Efficiency Green InGaN Light-Emitting Diodes With Metal-Doped ITO Layer

Cited by 4 publications

References 21 publications

Enhancing light extraction efficiency of GaN LED by combining complex‐period photonic crystals with doping

Enhancing light extraction efficiency of GaN LED by combining complex‐period photonic crystals with doping

Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and Al-doped indium tin oxide film

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