Fabrication and Characterization of High-Speed and High-Efficiency Photodetector

Shaoqing, 刘少卿 Liu; Qin, 韩勤 Han; Xiaohong, 杨晓红 Yang; Yu, 刘宇 Liu; Jie, 王杰 Wang; Xiuping, 王秀平 Wang

doi:10.3788/lop49.022301

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“…The InP/InGaAs/InP (PIN) photodiode (PD) has been widely used in various applications including remote sensing, environmental research, night vision, plastic recycling, weather forecast, pharmaceutical quality inspection etc [1][2][3][4][5] , thanks to their good electron transport properties and their effective radiation absorption in the 1.0-1.7 μm wavelength region [6,7] . In-GaAs PIN PDs fabricated with planar structures exhibit high stability and high reliability [8,9] , especially in the dark current characteristics.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

et al. 2017

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Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 °C for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50 μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of −5 V and a high breakdown voltage of larger than 41 V (I < 10 μA). In addition, a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector.

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