Fabrication and Characterization of High-Voltage NiO/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Power Diodes

Luo, Haoxun; Zhou, Xianda; Chen, Zimin; Pei, Yanli; Lü, Xing; Wang, Gang

doi:10.1109/ted.2021.3091548

Cited by 35 publications

(21 citation statements)

References 31 publications

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“…It has been reported that the main transport mechanisms in NiO x /β‐Ga 2 O 3 heterojunction diode are the interface recombination current or the trap‐assisted tunneling current. [ 56 ] An interplay of these mechanisms may result in the changed noise spectral density dependence on current. A similar evolution of the S I (I) behavior was reported for other heterojunction devices.…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes

Ghosh,

Mudiyanselage,

Kargar

et al. 2023

Adv Elect Materials

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Temperature dependence of the low‐frequency electronic noise in NiOx/β‐Ga2O3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f‐type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). It is observed that there is an intriguing non‐monotonic dependence of the noise on temperature near T = 380 K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes is determined to be on the order of 10−14 cm2 Hz−1 (f = 10 Hz) at 0.1 A cm−2 current density. In terms of the noise level, NiOx/β‐Ga2O3 p–n diodes perform excellently for new technology and occupy an intermediate position among devices of various designs implemented with different ultra‐wide‐bandgap semiconductors. The obtained results are important for understanding the electronic properties of NiOx/β‐Ga2O3 heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.

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Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes

Ghosh,

Mudiyanselage,

Kargar

et al. 2023

Adv Elect Materials

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“…The theoretical V on of the NiO/β-Ga 2 O 3 heterojunction diode is about 3.6 V, but the actual reported V on is much less than this value. 25,26,28,31 Several studies have pointed out that the interfacial recombination mechanism under forward bias is probably the most important contributor to this phenomenon. 23,26,28,31 Defective states formed at the NiO/β-Ga 2 O 3 interface provide a pathway for electrons from the conduction band of β-Ga 2 O 3 injecting into valence band of NiO and recombining with holes there.…”

Section: Simulation Settings and Proposed Structurementioning

confidence: 99%

“…25,26,28,31 Several studies have pointed out that the interfacial recombination mechanism under forward bias is probably the most important contributor to this phenomenon. 23,26,28,31 Defective states formed at the NiO/β-Ga 2 O 3 interface provide a pathway for electrons from the conduction band of β-Ga 2 O 3 injecting into valence band of NiO and recombining with holes there. 26 Therefore, the interface traps are set up and displayed in Table II, which is referenced and modified from Ref.…”

Section: Simulation Settings and Proposed Structurementioning

confidence: 99%

“…The lack of ptype Ga 2 O 3 makes it necessary to utilize other p-type materials [21][22][23] to form P regions in Ga 2 O 3 Fin-JFET. Among these, NiO is considered the most promising one to construct heterojunction owing to its wide bandgap of 3.6-4.0 eV, controllable p-type doping and decent hole mobility, 24 which has been used in a variety of heterojunction (HJ) diodes [25][26][27][28] and lateral HJ-FETs. 29,30 In this paper, we propose a novel vertical fin-based NiO/β-Ga 2 O 3 heterojunction field-effect transistor (Fin-HJFET) and study it by simulation.…”

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confidence: 99%

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Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp

Huang,

Chen,

et al. 2023

ECS J. Solid State Sci. Technol.

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A novel vertical ﬁn-based NiO/β-Ga2O3 heterojunction ﬁeld-effect transistor (Fin-HJFET) is proposed and studied by TCAD. Theoretically high conduction band offset ( ) enables Ga2O3 Fin-HJFET to produce an electron confinement effect at a certain gate bias voltage. According to the simulation results, this effect means Ga2O3 Fin-HJFET can not only form surface-conducting fin channels that are not available in conventional ﬁn-based junction ﬁeld-effect transistor (Fin-JFET), but also have a stronger electron accumulation capability than Ga2O3 vertical FinFET due to the deep potential well, which leads to a lower specific on-resistance ( ). In addition, Ga2O3 Fin-HJFET inherits the advantages of Ga2O3 FinFET as a vertical normally-off device and has a higher breakdown voltage compared to FinFET without field plates due to the protection of the highly doped NiO layer. Particularly, Fin-HJFET with different heterojunction band alignments are also considered and discussed. Finally, the parameter influence and future optimization space of this highly promising device are explored, providing guidance for actual device fabrication and future device improvement.

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“…It could be an alternative choice to construct heterojunctions by employing other p-type oxide materials on β -Ga 2 O 3 . [5,9] In the p-type oxide family, wide bandgap NiO materials can be used for integration with n-Ga 2 O 3 due to their high-visible spectral transparency and p-type conductivity derived from nickel vacancies or monovalent impurities. [10] He et al successfully achieved selective high-resistance zones on β -Ga 2 O 3 wafers, which considerably reduced the leakage current and increased the breakdown voltage of Schottky barrier diodes (SBD).…”

Section: Introductionmentioning

confidence: 99%

NiO/β-Ga₂O₃ heterojunction diodes with ultra-low leakage current below 10⁻¹⁰ A and high thermostability

et al. 2023

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In this paper, the 10 nm p-NiO thin film is prepared by thermal oxidation of Ni on the β-Ga2O3 to form NiO/β-Ga2O3 p-n heterojunction diodes (HJDs). The NiO/β-Ga2O3 HJDs exhibit excellent electrostatic properties, with a high breakdown voltage of 465 V, a specific on-resistance (Ron,sp) of 3.39 mΩ·cm2, a turn-on voltage (Von) of 1.85 V, yielding a static Baliga’s figure of merit (FOM) of 256 MW/cm2. Also the HJDs have low turn-on voltage, which reduces conduction loss dramatically, and a rectification ratio of up to 108. Meanwhile, the HJDs reverse leakage current is essentially unaffected at temperatures below 170 ℃, and its leakage level may be controlled below 10-10 A. It indicates that p-NiO/β-Ga2O3 HJDs with good thermal stability and high-temperature operating ability turn to be an effective route for high-performance β-Ga2O3 power devices.

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Fabrication and Characterization of High-Voltage NiO/β-Ga₂O₃ Heterojunction Power Diodes

Cited by 35 publications

References 31 publications

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes

Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp

NiO/β-Ga₂O₃ heterojunction diodes with ultra-low leakage current below 10⁻¹⁰ A and high thermostability

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Fabrication and Characterization of High-Voltage NiO/β-Ga2O3 Heterojunction Power Diodes

Cited by 35 publications

References 31 publications

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Novel Vertical Fin-Based NiO/β-Ga2O3 Heterojunction Field-Effect Transistor with a Low Ron,sp

NiO/β-Ga2O3 heterojunction diodes with ultra-low leakage current below 10−10 A and high thermostability

Contact Info

Product

Resources

About

Fabrication and Characterization of High-Voltage NiO/β-Ga₂O₃ Heterojunction Power Diodes

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes

Novel Vertical Fin-Based NiO/β-Ga₂O₃ Heterojunction Field-Effect Transistor with a Low R_on,sp

NiO/β-Ga₂O₃ heterojunction diodes with ultra-low leakage current below 10⁻¹⁰ A and high thermostability