Fabrication and characterization of In 2 O 3 nanowires

Growth and luminescence of elongated In2O3 micro- and nanostructures in thermally treated InN

“…[5][6][7] In the present work, In 2 O 3 elongated micro-and nanostructures have been grown by thermal treatment of compacted InN powder under argon flow. This method has been previously reported to lead to the growth of elongated nanostructures, of different semiconductor oxides [8][9][10][11] and of CdSe 12 on the surface of the sample so that neither catalyst nor a foreign substrate is used.…”

“…The blue-green band has been attributed to oxygen vacancies 5,17,18,21 and the 3.1 eV to near band edge emission 22 and to defects generated during growth. 7 The CL results indicate that the samples treated with a second step at 600°C, contain a higher amount of defects related to oxygen vacancies than those treated at 650°C, which exhibit well formed structures.…”

Controllable synthesis and field emission properties of In2O3 nanostructures

“…Three main peaks are located at 396, 541, 623 nm. It is believed that the ultraviolet peak at 396nm may originate from the near-band-edge emission of the wide band gap In 2 O 3 , which is similar to the reported ultraviolet emission from In 2 O 3 nanostructures with centers at 385, and 392 nm [23,24]. The visible emission centered at 541 and 623 nm match the deep-level emission [25], which can be enhanced by impurities, low crystallinity, or structure defects of the crystal.…”

Synthesis, Characterization, and Photoluminescence Properties of In2O3 Nanocrystals Encapsulated by Carbon Vesicles and Neat In2O3 Nanocrystals Generated by the RAPET Technique

“…It is known that bulk In 2 O 3 cannot emit light at room temperature. [18][19][20] Earlier reports indicated that In 2 O 3 nanoparticles have PL peaks at 480 and 520 nm. In 2 O 3 nanofibers exhibit broad PL emission peaks centered at 470 nm, [21] and In 2 O 3 nanowires synthesized by the EDO method display strong PL emission peaks centered at 425, 429, 442, and 460 nm.…”

“…Therefore, it should be noted that In 2 O 3 nanopar- ticles synthesized by the RAPET technique exhibit an irregular plate shape, as well as a spherical morphology. The spherical shape of our nanoparticles differs from the wireshaped In 2 O 3 nanoparticles obtained by Dai et al [19] The synthetic strategy of Dai involves the silicon substrate, pure indium balls, and H 2 O, and the reaction was conducted under an argon flow at 850°C. The current RAPET synthetic approach involves a simpler precursor, In(acetate) 3 , and it does not require solvents, any substrate, or an argon atmosphere for the formation of spherically shaped In 2 O 3 nanoparticles.…”